《tda8932philips的数字功放音质好,没有其它数字功放很浓的金属声.com》.pdf

《tda8932philips的数字功放音质好,没有其它数字功放很浓的金属声.com》.pdf

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INTEGRATEDCIRCUITSOBJECTIVEDEVICESPECIFICATIONThisDeviceSpecificationcontainsdataforproductdevelopment.PhilipsSemiconductorsreservestherighttochangethespecificationinanymannerwithoutnotice.TDA89322x15WclassDPowerAmplifierConfidentialObjectiveDeviceSpecificationDate:Sept13,2005Version:1.7Previousdate:July7,2005PhilipsSemiconductors PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932Changehistory1.022-sep-04Initialversion1.121-oct-04Updatedafterfeedbackdesignteam1.217-nov-04RedefinitionofTDA8932:1xBTLor2xSE1.324-nov-04Updatedafterfeedbackdesignteam1.413-Dec-04Updatedafterfeedbackcustomer1.58-April-05Updatedwithnewpinning1.67-July-05Updatedwithtestresultsandpinconfiguration1.713-Sept-05GeneralupdateSeptember2005,version1.73 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932CONTENTSCONTENTS41FEATURES72APPLICATIONS73GENERALDESCRIPTION74QUICKREFERENCEDATA85ORDERINGINFORMATION86BLOCKDIAGRAM97PINNINGINFORMATION107.1Pinning107.2Pindescription118FUNCTIONALDESCRIPTION128.1General128.2Modeselection/interfacing128.3Pulsewidthmodulationfrequency138.4Protections138.4.1Thermalfoldback138.4.2Overtemperatureprotection(OTP)138.4.3Overcurrentprotection(OCP)148.4.4Windowprotection(WP)148.4.5Supplyvoltageprotections158.5DiagnosticOutput168.6Differentialinputs168.7Halfsupplyvoltageoutput179INTERNALCIRCUITRY18September2005,version1.74 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893210LIMITINGVALUES2511THERMALCHARACTERISTICS2512QUALITYSPECIFICATION2513STATICCHARACTERISTICS2614SWITCHINGCHARACTERISTICS2815DYNAMICSEACCHARACTERISTICS2916DYNAMICBTLACCHARACTERISTICS3017APPLICATIONINFORMATION3217.1Thermalbehaviour(PCBconsiderations)3217.2Thermalfoldback3217.3OutputPowerestimation3317.4Externalclock3317.5Pumpingeffects3517.6Gainsetting3617.7Lowpassfilterconsiderations3617.8Curvesmeasuredinreferencedesign3617.9Typicalapplicationschematics3718PACKAGEOUTLINE3919SOLDERING40September2005,version1.75 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932LISTOFFIGURESFigure1:Blockdiagram9Figure2:Pinconfiguration10Figure3:DiagnosticOutputfordifferentkindofshortcircuitconditions.16Figure4:InputconfigurationformonoBTLapplication.17Figure5:OutputpowerstereoSE(@THD=10%)andrequiredRth(j-a)versussupplyvoltage(Tj=125°C,dT=70°C)31Figure6:OutputpowermonoBTLapplication(@THD=10%)andrequiredRth(j-a)versussupplyvoltage(Tj=125°C,dT=70°C)31Figure7:Masterslaveconceptintwochipapplication34Figure8:Input/speakerconfigurationforstereoSEapplicationforreducingpumpingeffects.35Figure9:Inputconfigurationforreducinggain.36Figure10:Typicalapplicationdiagramfor2xSE(asymmetricalsupply)37Figure11:Typicalapplicationdiagramfor1xBTL(asymmetricalsupply)37Figure12:Typicalapplicationdiagramfor2xSE+1xBTL(asymmetricalsupply)38LISTOFTABLESTable1:Quickreferencedata8Table2:Orderinginformation8Table3:Pinningdescription11Table4:ModeselectionTDA893212Table5:OverviewprotectionsTDA893215Table6:Limitingvalues25Table7:Thermalcharacteristics25Table8:Staticcharacteristics26Table9:Switchingcharacteristics28Table10:DynamicACSEcharacteristics29Table11:DynamicACBTLcharacteristics30Table12:Master/Slaveconfiguration34Table13:Filtercomponentsvalue36September2005,version1.76 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA89321FEATURES•Highefficiency•Applicationwithoutheatsinkusingthermallyenhancedsmalloutlinepackage•Operatingvoltagefrom10Vto36Vasymmetricalor+/-5Vto+/-18Vsymmetrical•Thermallyprotected•Thermalfoldback•Fullshortcircuitproofacrossloadandtosupplylines(usingadvancedcurrentprotection)•Switchableinternal/externaloscillator(master-slavesetting)•Nopopnoise•Lowquiescentcurrent•Lowsleepcurrent•Monobridgedtiedload(fullbridge)orstereosingleended(halfbridge)application•Fulldifferentialinputs2APPLICATIONS•TelevisionsetsCRT/LCD/plasmaTV/projectionTV•Monitors3GENERALDESCRIPTIONTheTDA8932isahighefficiencyclass-Damplifierwithlowdissipation.Themaximumoutputpoweris2x25Winstereohalf-bridgeapplication(Rl=4ohm)or1x50Winmonofullbridgeapplication(Rl=8ohm).Duetothehighefficiencythedevicecanbeusedwithoutanyexternalheatsinkwhenplayingmusic.IfpropercoolingviathePCBisimplemented,acontinuousoutputpowerof2x15Wisfeasible.Duetotheimplementationofthermalfoldbackevenforhighsupplyvoltagesand/orlowerloadimpedancesthedevicecanbeoperatedwithconsiderablemusicoutputpowerwithouttheneedforanexternalheatsink.Thedevicehastwofulldifferentialinputsdrivingfourintegratedpowerswitches,combinedintwoindependentoutputs.Itcanbeusedasmonofullbridge(BTL)orasstereohalfbridge(SE).September2005,version1.77 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA89324QUICKREFERENCEDATATable1:QuickreferencedataSYMBOLPARAMETERCONDITIONMIN.TYP.MAX.UNITGeneral;Vp=29VVpOperatingsupplyvoltage102936VIsleepSleepcurrentVpowerup<0.8V80µAVengage<0.8VIpQuiescentcurrentWithoutload,20mAsnubbers,outputfilterStereoSEchannelPoutSEContinuous-timeRMSRL=4Ω;THD=10%1415WOutputpowerperVp=22VchannelRL=8Ω;THD=10%1415WVp=29VPeakoutputpowerRL=4Ω;THD=10%2325W(short-time)Vp=29VMonoBTLchannelPoutBTLContinuousRMSOutputRL=8Ω;THD=10%2830WpowerVp=22VRL=4Ω;THD=10%1415WVp=12VPeakoutputpowerRL=8Ω;THD=10%4850W(short-time)Vp=29V5ORDERINGINFORMATIONTable2:OrderinginformationTYPEPACKAGENUMBERNAMEDESCRIPTIONVERSIONTDA8932TSO32Plasticsmalloutlinepackage;32leads;bodySOT287-1width7.5mmSeptember2005,version1.78 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA89326BLOCKDIAGRAMVDDAOSCREFOSCIOVDDP18103129Oscillator28BOOT1IN1P2VSSDPWMDriverModulatorHigh27OUT1IN1N3CTRLDriverLow26VSSP1Stabi12V25STAB1VSSPINREF12+ManagerStabi12V24STAB2VSSP21BOOT2IN2P1520VDDP2PWMDriverModulatorHighOUT222IN2N14CTRLDriverLow23VSSP2DIAG4PROTECTIONSOVP,OCP,OTP,18DREFUVP,TF,WPREG5VVSSDCGND7VDDA11HVPREFPOWERUP6Mode30HVP1ENGAGE5VSSA19HVP2TDA89321,16,17,32913VSSATESTVSSD/HWFigure1:BlockdiagramSeptember2005,version1.79 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA89327PINNINGINFORMATION7.1PinningVSSD/HW132VSSD/HWIN1P231OSCIOIN1N330HVP1DIAG429VDDP1ENGAGE528BOOT1POWERUPOUT1627CGND726VSSP1VDDA8TDA893225STAB1VSSA924STAB2SO32OSCREF1023VSSP2HVPREF1122OUT2INREF1221BOOT2TEST1320VDDP2IN2N1419HVP2IN2P1518DREFVSSD/HW1617VSSD/HWFigure2:PinconfigurationSeptember2005,version1.710 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA89327.2PindescriptionTable3:PinningdescriptionPinnamePinno.DescriptionVSSD/HW1NegativedigitalsupplyvoltageandhandlewaferconnectionIN1P2Positiveaudioinputforchannel1IN1N3Negativeaudioinputforchannel1DIAG4(Open-drain)diagnosticoutputENGAGE5Engageinput;switchbetweenmuteandoperatingmodePOWERUP6Powerupinput;switchbetweensleepandmutemodeCGND7Controlground;referenceforPOWERUP,ENGAGE,DIAGVDDA8PositiveanalogsupplyvoltageVSSA9NegativeanalogsupplyvoltageOSCREF10Master/slavesettingoscillator.Setinternaloscillatorfrequency(onlymaster-setting)HVPREF11DecouplingforinternalhalfsupplyvoltagereferenceINREF12DecouplingforinputreferencevoltageTEST13Testsignalinput;fortestingpurposeonlyIN2N14Negativeaudioinputforchannel2IN2P15Positiveaudioinputforchannel2VSSD/HW16NegativedigitalsupplyvoltageandhandlewaferconnectionVSSD/HW17NegativedigitalsupplyvoltageandhandlewaferconnectionDREF18Decouplinginternal5VregulatorforlogicsupplyHVP219Halfsupplyvoltageoutputforchargingsingle-endedcapacitorforchannel2VDDP220Positivepowersupplyvoltageforchannel2BOOT221Bootstrapcapacitorforchannel2OUT222PWMoutputchannel2VSSP223Negativepowersupplyvoltageforchannel2STAB224Decouplinginternal12Vregulatorforthedriverschannel2STAB125Decouplinginternal12Vregulatorforthedriverschannel1VSSP126Negativepowersupplyvoltageforchannel1OUT127PWMoutputchannel1BOOT128Bootstrapcapacitorforchannel1VDDP129Positivepowersupplyvoltageforchannel1HVP130Halfsupplyvoltageoutputforchargingsingle-endedcapacitorforchannel1OSCIO31Input/outputforexternaloscillator(slave-setting)VSSD/HW32NegativedigitalsupplyvoltageandhandlewaferconnectionSeptember2005,version1.711 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA89328FUNCTIONALDESCRIPTION8.1GeneralTheTDA8932isamonofullbridge(BTL)orstereohalfbridge(SE)audiopoweramplifierusingclass-Dtechnology.TheaudioinputsignalisconvertedintoaPulseWidthModulated(PWM)signalviaananaloginputstageandPWMmodulator.ToenabletheoutputpowerDMOStransistorstobedriven,thisdigitalPWMsignalisappliedtoacontrolandhandshakeblockanddrivercircuitsforboththehighsideandlowside.A2nd-orderlow-passfilterconvertsthePWMsignaltoananalogaudiosignalacrosstheloudspeakers.TheTDA8932containstwoindependenthalfbridgeswithfulldifferentialinputstages.Theloudspeakerscanbeconnectedinthefollowingconfigurations:•Monofullbridge(Bridge-TiedLoad,BTL)•Stereohalf-bridge(Single-Ended,SE)TheTDA8932containscommoncircuitstobothchannelssuchastheoscillator,allreferencesources,themodefunctionalityandadigitaltimingmanager.Thefollowingprotectionsarebuilt-in:thermalfoldback,temperature,currentandvoltageprotections.8.2Modeselection/interfacingTheTDA8932canbeswitchedinthreeoperatingmodesviaPOWERUPandENGAGEinputs:•Sleepmode;withaverylowsupplycurrent•Mutemode;theamplifiersareswitchingidle(50%dutycycle),buttheaudiosignalattheoutputissuppressedbydisablingtheVl-converterinputstages.Inthismodethereferencecurrentsandvoltagesarepresent.TheHVPcapacitorshavebeenchargedtohalfthesupplyvoltage(asymmetricalsupplyonly).•Operatingmode;theamplifiersarefullyoperationalwithoutputsignal.BothpinsPOWERUPandENGAGErefertopinCGND.Inthetable4belowthedifferentmodesaregivenasfunctionofthevoltagesonthePOWERUPandENGAGEpins.ModeselectionPOWERUPENGAGESleepVpowerup<0.8VX(don’tcare)Mute2V140C,thenthegainisgraduallyreducedresultinginasmalleroutput0signalandlessdissipation.AtTj>150Ctheoutputsarefullymuted.8.4.2Overtemperatureprotection(OTP)0IfthejunctiontemperatureTj>160C,thenthepowerstagewillshutdownimmediately.September2005,version1.713 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA89328.4.3Overcurrentprotection(OCP)Whentheloudspeakerterminalsareshort-circuitedorifoneofthedemodulatedoutputsoftheamplifierisshort-circuitedtooneofthesupplylines,thiswillbedetectedbytheovercurrentprotection(OCP).Iftheoutputcurrentexceedsthemaximumoutputcurrentof4A,thiscurrentwillbelimitedbytheamplifierto4Awhiletheamplifieroutputsremainswitching(theamplifierisNOTshut-downcompletely).Theamplifiercandistinguishbetweenanimpedancedropoftheloudspeakerandlow-ohmicshortacrosstheloadortooneofthesupplylines.Thisimpedancethreshold(Zth)dependsonthesupplyvoltageused.Whenashortismadeacrosstheloadcausingtheimpedancetodropbelowthethresholdlevel(40Viscausedbyother/externalcausesthantheTDA8932willshutdown,butthedevicecanstillbedamagedsincethesupplyvoltagewillremain>40Vinthiscase.TheOVPprotectionisnotasupplyclamp.AnadditionalUnBalanceProtection(UBP)circuitcomparesthepositiveanalog(VDDA)andthenegativeanalog(VSSA)supplyvoltageandistriggeredifthevoltagedifferencebetweenthemexceedsacertainlevel.Thisleveldependsonthesumofbothsupplyvoltages.Anexpressionfortheunbalancethresholdlevelisasfollows:Vth(ubp)≈0.25x(VDDA+VSSA)Intable5belowanoverviewisgivenofallprotectionsandtheeffectontheoutputsignalProtectionnameCompleteRestartRestartDIAGshut-downwhenfaultevery100msactiveLOWisremovedminimal50ms3)Thermalfoldback(TF)NYNNOvertemperatureprotection(OTP)YNYY1111Overcurrentprotection(OCP)N)Y)N)Y)2Windowprotection(WP)Y)YNYUndervoltageprotection(UVP)YNYYOvervoltageprotection(OVP)YNYYUnBalanceProtection(UBP)YNYYTable5:OverviewprotectionsTDA8932Notes:1.Onlycompleteshutdownofamplifierifshort-circuitimpedanceisbelowthethresholdofTBF.Inallothercasescurrentlimiting:resultinginclippingoutputsignal.2.Faultconditiondetectedduring(every)transitionbetweensleep-to-muteandduringrestartafteractivationofOCP(shorttooneofthesupplylines)3.Amplifiergainwilldependonjunctiontemperatureandheatsinksize.September2005,version1.715 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA89328.5DiagnosticOutputWheneveroneoftheprotectionsistriggeredexceptforthermalfoldback(TF)assummarizedintable5,theDIAGoutputisactivatedlow.Thediagnosticoutputsignalduringdifferentshortconditionsisillustratedinfigure3.TheDIAGpinreferstoCGND.Aninternalreferencesupplywillpull-uptheopen-drainDIAGoutputtoapproximately2.4V.Thisinternalreferencesupplycandeliverapproximately50µA.UsingtheDIAGasinputavoltagesmallerthan0.8Vwillputthedeviceintosleepmode.ShortedloadShorttosupplylineAmplifierNorestartrestart2.4VCGND=0V≈50ms≈50msFigure3:DiagnosticOutputfordifferentkindofshortcircuitconditions.8.6DifferentialinputsForahighcommonmoderejectionratioandamaximumofflexibilityintheapplication,theaudioinputsarefullydifferential.Byconnectingtheinputsanti-parallelthephaseofoneofthetwochannelscanbeinverted,sothataloadcanbeconnectedbetweenthetwosetsofoutputfilters.InthiscasethesystemoperatesasamonoBTLamplifier.TheinputconfigurationforamonoBTLapplicationisillustratedinFig.4.Insingle-endedconfigurationitisalsorecommendedtoconnectthetwodifferentialinputsinanti-phase.Thishasadvantagesforthecurrenthandlingofthepowersupplyatlowsignalfrequenciesandminimizessupplypumping(seealsosection17.6).IN1+OUT1+IN1--AUDIOIN1OUT2IN2++-IN2-September2005,version1.716 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932Figure4:InputconfigurationformonoBTLapplication.8.7HalfsupplyvoltageoutputWhenthePOWERUPishighthehalfsupplyvoltageoutputchargestheSingle-Endedcapacitor.Thestart-upwillbepopfreesincethedevicestartsswitchingwhentheSEcapacitorsarecompletelycharged.ThetimerequiredforchargingtheSEcapacitorisdependingonitsvalue.ThehalfsupplyvoltageoutputisdisabledwhentheTDA8932isusedincombinationwithasymmetricalsupply.September2005,version1.717 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA89329INTERNALCIRCUITRYPinSymbolEquivalentcircuit1,16VSSD/HW17,32VDDA1,16,17,32VSSA2,15IN1P,IN2P3,14IN1N,IN2N12INREFVDDA2k+/-20%2,1548k+/-20%12HVPREF48k+/-20%3,142k+/-20%VSSASeptember2005,version1.718 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932PinSymbolEquivalentcircuit4DIAGVDDAVref4VSSACGND5ENGAGEVDDAIref5VSSACGND6POWERUPVDDA6VSSACGNDSeptember2005,version1.719 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932PinSymbolEquivalentcircuit7CGNDVDDA7VSSA8VDDA8VSSDVSSA9VSSAVDDA9VSSDSeptember2005,version1.720 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932PinSymbolEquivalentcircuit10OSCREFVDDAIref10VSSA11HVPREFVDDA11VSSA12INREFVDDA11HVPREFVSSASeptember2005,version1.721 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932PinSymbolEquivalentcircuit13TESTVDDA13VSSA18DREF18VSSD19,30HVP1,2VDDA19,30VSSASeptember2005,version1.722 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932PinSymbolEquivalentcircuit20,29VDDP2,123,26VSSP2,120,2923,2621,28BOOT21,28OUT1,222,27OUT1,2VDDP1,222,27VSSP1,2September2005,version1.723 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932PinSymbolEquivalentcircuit24,25STAB1,2VDDA24,25VSSP1,231OSCIODREF31VSSDSeptember2005,version1.724 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893210LIMITINGVALUESTable6:LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).SYMBOLPARAMETERCONDITIONMIN.MAX.UNITVpSupplyvoltageAsymmetrical1040VoperatingmodeSymmetrical+/-5+/-20VoperatingmodeIormrepetitivepeakcurrentinoutputnote1;maximum4ApinoutputcurrentlimitingTjJunctiontemperature150°CTstgStoragetemperaturerange-55150°CTambAmbienttemperaturerange-4085°CNotes1.Currentlimitingconcept.11THERMALCHARACTERISTICSTable7:ThermalcharacteristicsSYMBOLPARAMETERCONDITIONMAX.UNITRth(j-a)SO32ThermalresistancejunctiontoambientInfreeair[1]35K/WRth(j-l)SO32ThermalresistancejunctiontoleadfingerInfreeair[1]16K/WRth(j-c)SO32ThermalresistancejunctiontocaseInfreeair[2]3K/W[1]Measuredintheapplicationboard[2]Stronglydependsonwhereyoumeasureonthecase12QUALITYSPECIFICATIONInaccordancewith‘SNW-FQ-611-D’.Thenumberofthequalityspecificationcanbefoundinthe“QualityReferenceHandbook”.Thehandbookcanbeorderedusingthecode939851063011.September2005,version1.725 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893213STATICCHARACTERISTICSTable8:StaticcharacteristicsVp=22V;fosc=320kHz;Tamb=25°C;unlessotherwisespecified.SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITSupplyVpSingle(a-symmetricalsupplyOperatingmode102236Vvoltagenote1SymmetricalsupplyvoltageOperatingmode+/-5+/-11+/-18Vnote1IsleepSleepsupplycurrentSleepmode-80TBFµAIq(tot)TotalquiescentsupplyOperatingmode-4080mAcurrentinoperatingmodeNoload,snubbersandfilterconnectedSeriesresistanceoutputswitchesRds,on25Drain-sourceresistanceTj=25°C-150-mΩpowerswitchRds,on125Drain-sourceresistanceTj=125°C-234-mΩpowerswitchPowerupinput:POWERUPw.r.t.CGNDVPOWERUPInputvoltageReferencetoCGND0-6.5Vnote5IPOWERUPInputcurrentVPOWERUP=3V-120µAVlowInputvoltagelowlevelReferencetoCGND0-0.8VVhighInputvoltagehighlevelReferencetoCGND2-6.5Vmodenote5Engageinput:ENGAGEw.r.t.CGNDVENGAGEInputvoltageReferencetoCGND0-6.5Vnote5IENGAGEInputcurrentVENGAGE=3V-2040µAVlowInputvoltagelowlevelReferencetoCGND0-0.8Vnote3VhighInputvoltagehighlevelReferencetoCGND3-6.5VmodeNotes3and5Diagnosticoutput:DIAGw.r.t.CGNDVDIAG-LOWVoltageonDIAGpinActivatedprotection--0.8V(seetable5).ReferencetoCGND.VDIAG-HIGHVoltageonDIAGpinOperatingmode25VReferencetoCGND.Audioinputs;pinsIN1M,IN1P,IN2MandIN2PViDCinputvoltageNote2-2.9-VSeptember2005,version1.726 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932Halfsupplyvoltage:HVP1,HVP2,HVPREFVHVP1,2HalfsupplyvoltagetoMuteandoperating½Vp-½Vp½Vp+VchargeSE-capacitormode0.5V0.5VIHVP1,2ChargecurrentforHVPMutemode45mAcapacitorHVP=½Vp–1VVHVPREFHalfsupplyreferenceMuteandoperating½Vp-½Vp½Vp+Vvoltage0.5V0.5VAmplifieroutputs;pinsOUT1andOUT2|Voo(SE)|OutputoffsetvoltagewithSE;mute;--15mVrespecttoHVPxSE;operating;note4--150mV|Voo(BTL)|OutputoffsetvoltageBTL;mute;--20mVBTL;operating;note4--210mVStabilizeroutput;pinSTAB1,STAB2Vo(stab)StabilizeroutputvoltageMuteandoperating;101112Vwithrespectto/SSPXVoltageprotectionsVUVPUndervoltageprotection7.58.59.5VVOVPOvervoltageprotection3638.540VVUBPUnbalanceprotectionOperatingwhen81114VHVPREFwithinVUBPlevelsCurrentprotectionsIOCPlimOvercurrentprotectionCurrentlimiting4--ATemperatureprotectionTprotTemperatureprotection155-160°CactivationTTFThermalfoldbackactivation140-150°COscillatorreferenceVoscio_highOscillatorI/Olevelvoltage4.0-5VhighVoscio_lowOscillatorI/Olevelvoltage0-0.8VlowSmaxNumberofslavesdrivenby12---onemasterNotes1.ThecircuitisDCadjustedatVp=10Vto36V.2.WithrespecttoVSSAandwithasymmetricalsupply.3.Thetransitionbetweenmuteandoperatingmodeisdeterminedbythetime-constantontheENABLEpin.4.DCoutputoffsetvoltageisappliedtotheoutputduringthetransitionbetweenmuteandoperatingmodeinagradualway.ThedVoo/dtcausedbyanyDCoutputoffsetisdeterminedbythetime-constantontheENGAGEpin.5.ThemaximumvoltageappliedonPOWERUPandENGAGEpinmustneverexceedthesupplyvoltageVDDxSeptember2005,version1.727 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893214SWITCHINGCHARACTERISTICSTable9:SwitchingcharacteristicsVp=22V;Tamb=25°C;unlessotherwisespecified.SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITInternaloscillatorfoscTypicalinternalRosc=39kΩ-320-kHzoscillatorfrequencyfosc(int)Internaloscillator300-500kHzfrequencyrangeTimingtriseRise-timePWMoutputIout=0-10-nstfallFall-timePWMoutputIout=0-10-nstminMinimumpulsewidthIout=0-80-nsSeptember2005,version1.728 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893215DYNAMICSEACCHARACTERISTICSTable10:DynamicACSEcharacteristicsVp=22V;RL=2x4Ω;f=1kHz;fosc=320kHz;RSL<0.05Ω(note1);Tamb=25°C;unlessotherwisespecified.SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITOutputpowerperRL=4Ω;Vp=22V;note2PochannelContinuous-timeoutputpowerTHD=0.5%,f=1kHz1112-WTHD=0.5%,f=100Hz-12-WTHD=10%,f=1kHz1415-WTHD=10%,f=100Hz-15-WR=8Ω;Vp=30V;note2LContinuous-timeoutputpowerTHD=0.5%,f=1kHz1112-WTHD=0.5%,f=100Hz-12-WTHD=10%,f=1kHz1415-WTHD=10%,f=100Hz-15-WRL=4Ω;Vp=29V;note2Maximumoutputpower(short-time)THD=0.5%1920-WTHD=10%2325-WRL=8Ω;Vp=24V;note2Continuous-timeoutputpowerTHD=0.5%78-WTHD=10%910-WTHDTotalharmonicdistortionPo=1W;note3fi=1kHz-0.040.1%fi=10kHz-0.040.1%Gv(cl)ClosedloopvoltagegainVi=100mV;noload293031dBαcsChannelseparationfi=1kHz,Po=1W5670-dBSVRRSupplyvoltagerippleOperating;note4rejectionfi=100Hz-50-dBfi=1kHz-45-dB|Zi|inputimpedanceDifferential70100kΩVnoNoiseoutputvoltageOperating,Rs=0Ω,note5-70100µVmute;note6-5070µV|DGV|Channelunbalance-1-dBVo(mute)OutputsignalinmuteMute;Vi=TBF--500µVCMRRCommonmoderejectionVi(CM)=1VRMS-75-dBratioNotes1.RSListheseriesresistanceofinductoroflow-passLCfilterintheapplication.2.Outputpowerismeasuredindirectly;basedonRDSonmeasurement.3.Totalharmonicdistortionismeasuredinabandwidthof22Hzto20kHz,AES17brickwall.Maximumlimitisguaranteedbutnot100%tested.4.Vripple=Vripple(max)=2V(p-p);Rs=0ohm.5.B=22Hz–20kHz,AES17brickwall6.B=22Hz–20kHz,AES17brickwall,independentonRsSeptember2005,version1.729 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893216DYNAMICBTLACCHARACTERISTICSTable11:DynamicACBTLcharacteristicsVp=22V;RL=4Ω;f=1kHz;fosc=320kHz;RsL<0.05Ω(note1);Tamb=25°C;unlessotherwisespecified.SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITPoOutputpowerRL=4Ω;Vp=12V;note2Continuous-timeoutputpowerTHD=0.5%,f=1kHz1112-WTHD=0.5%,f=100Hz-12-WTHD=10%,f=1kHz1415-WTHD=10%,f=100Hz-15-WRL=8Ω;Vp=22V;note2Continuous-timeoutputpowerTHD=0.5%,f=1kHz2324-WTHD=0.5%,f=100Hz-24-WTHD=10%,f=1kHz2830-WTHD=10%,f=100Hz-30-WRL=4Ω;Vp=15V;note2Maximumoutputpower(short-time)THD=0.5%1920-WTHD=10%2325-WRL=8Ω;Vp=30V;note2Maximumoutputpower(short-time)THD=0.5%3840-WTHD=10%4750-WTHDTotalharmonicdistortionPo=1W;note3fi=1kHz-0.040.1%fi=10kHz-0.040.1%Gv(cl)Closedloopvoltagegain353637dBSVRRSupplyvoltagerippleOperating;note4rejectionfi=100Hz-50-dBfi=1kHz-45-dBSleep;fi=100Hz;note4-80-dB|Zi|InputimpedanceDifferential3550kΩVnoNoiseoutputvoltageOperating,18V,Rs=0ohm,note5-100150µVMute;18V,note6-70100µV|DGV|Channelunbalance-1-dBVo(mute)OutputsignalinmuteMute;Vi=TBF--500µVCMRRCommonmoderejectionVi(CM)=1VRMS-75-dBratioNotes1.RSListheseriesresistanceofinductoroflow-passLCfilterintheapplication.2.Outputpowerismeasuredindirectly;basedonRDSonmeasurement.3.Totalharmonicdistortionismeasuredinabandwidthof22Hzto20kHz,AES17brickwall.Maximumlimitisguaranteedbutmaynotbe100%tested.4.Vripple=Vripple(max)=2V(p-p);Rs=0ohm.5.B=22Hz–20kHz,AES17brickwall6.B=22Hz–20kHz,AES17brickwall,independentonRsSeptember2005,version1.730 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA89322xSE:THD=10%Rl=4ohmRl=6ohmRl=8ohmRl=16ohm4080.00353060.00252040.00Pout(W)Rthj-a(K/W)151020.00500.00812162024283236Vp(V)Figure5:OutputpowerstereoSE(@THD=10%)andrequiredRth(j-a)versussupplyvoltage(Tj=125°C,dT=70°C)1xBTL:THD=10%Rl=4ohmRl=6ohmRl=8ohmRl=16ohm7080.006060.00504040.00Pout(W)30Rthj-a(K/W)2020.001000.00812162024283236Vp(V)Figure6:OutputpowermonoBTLapplication(@THD=10%)andrequiredRth(j-a)versussupplyvoltage(Tj=125°C,dT=70°C)September2005,version1.731 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893217APPLICATIONINFORMATION17.1Thermalbehaviour(PCBconsiderations)TheheatsinkintheapplicationwiththeTDA8932ismadewiththecopperonthePrintedCircuitBoard(PCB).TheTDA8932Tusesthefourcornerleads(pins1,16,17and32)forheattransferfromdietoPCB.Thelimitingfactoristhemaximumjunctiontemperature[Tj(max)].Incaseofthermalfoldbackthismaximumjunctiontemperatureislimitedto140degreesforfullgain.Theformulabelowshowstherelationbetweenthemaximumallowablepowerdissipationandthethermalresistancefromjunctiontoambient.Tj(max)−TaR=th(j−a)PdissPdissisdeterminedbytheefficiencyoftheTDA8932.Infigures5and6theoutputpower(forstereoSEandmonoBTLapplication,bothforTHD=10%)isgivenasafunctionofsupplyvoltagefordifferentloadimpedances(4,6,8and16ohm).They-axistotheleftincombinationwithsolidlinesappliestotheoutputpowerlevels.Inthesamefiguresthesecondaryy-axisontherightincombinationwiththedashedlinesindicatestherequiredRth(j-a)valuetoapplytheseoutputpowerscontinuously.Allvaluesarecalculatedtakingintoaccountamaximumtemperaturedifferenceof70degreesbetweenambientandjunction,whileatthesametimethemaximumjunctiontemperatureis125degrees.Example:Vp=22VPout=2x15Winto4ohm(THD=10%)Tj(max)=125°CTamb=55°CTherequiredRth(j-a)=22K/W.IfmusicoutputpowerinsteadofcontinuoussinewaveoutputpowerisconsideredthemaximumachievableoutputpowerwiththesameRth(j-a)canbemuchhigher.17.2ThermalfoldbackTheTDA8932hasabuilt-inthermalfoldbackprotection.IncasethejunctiontemperatureoftheTDA8932exceedsthethresholdlevel(e.g.140°C)thegainoftheamplifierisdecreasedtoalevelwerethecombinationofdissipationandRth(j-a)resultinajunctiontemperaturearoundthethresholdlevel.Thismeansthatthedevicewillnotcompletelyswitchoff,butremainsoperationalatloweroutputpowerlevels.EspeciallywithmusicoutputsignalsthisfeatureenableshighpeakoutputpowerswhilestilloperatingwithoutanyexternalheatsinkotherthanthePCBarea.Ifthejunctiontemperaturestillincreasesduetoexternalcausesasecondtemperatureprotectionthresholdlevelisbuiltinwhichshutsdowntheamplifiercompletely.September2005,version1.732 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893217.3OutputPowerestimationTheachievableoutputpowersinseveralapplications(SEandBTL)canbeestimatedusingthefollowingexpressions:2⎛R⎞L⎜x1/2Vx()1−txf⎟⎜Pminosc⎟R+Rs⎝L⎠SE:P=o(0.5%)2xRL2⎛R⎞L⎜xVx()1−txf⎟⎜Pminosc⎟R+2xRs⎝L⎠BTL:P=o(0.5%)2xRLMaximumcurrentinternallylimitedto4A:1/2Vx()1−txfPminoscSE:I=o(peak)R+RsLVx(1−txf)PminoscBTL:I=o(peak)R+2xRsLVariables:RL=loadimpedancefosc=oscillatorfrequency(typical350kHz)tmin=minimumpulsewidth(typical80ns)VP=singlesidedsupplyvoltage(or0.5*(VDD+|VSS|))PO(0.5%)=outputpowerattheonsetofclippingRs=totalseriesresistanceconsistingofbondwires,leads,Rdson_switch,seriesresistanceofcoil(typical0.3Ω@Tj=25°C)NotethatIo(peak)shouldbebelow4A(section9).Io(peak)isthesumofthecurrentthroughtheloadandtheripplecurrent.Thevalueoftheripplecurrentisdependentonthecoilinductanceandvoltagedropoverthecoil.17.4ExternalclockIftwoormoreclassDamplifiersareuseditisrecommendedthatalldevicesrunatthesameswitchingfrequency.ThiscanberealizedbyconnectingallOSCIOpinstogetherandconfigureoneoftheTDA8932intheapplicationasCLOCKMASTER,whiletheotherTDA8932devicesareconfiguredinSLAVEMODE.TheOSCIOpinisatri-stateinputoutputbuffer.September2005,version1.733 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932InMASTERMODEtheOSCIOpinisconfiguredasoscillatorOUTPUT.InSLAVEMODEtheOSCIOpinisconfiguredasoscillatorINPUT.MASTERMODEisenabledbyapplyingaresistorbetweenOSCREFpinandVSSD,whileSLAVEMODEisenteredbydirectlyconnectingtheOSCREFpintoVSSD(sowithoutanyresistor).Thisisillustratedinfigure7.Thevalueoftheresistoralsosetsthefrequencyofthecarrierandcanbeestimatedbyfollowing912.45x10expression:f=oscROSC45403530]Ω2520Rosc[k151050300350400450500fosc[kHz]ThetablebelowsummarizeshowtoconfiguretheTDA8932inMasterorSlaveconfiguration.Table12:Master/SlaveconfigurationConfigurationOSCREFOSCIOMasterRosc>25kΩOUTPUTSlaveRosc=0Ω;INPUTShortedtoVSSDMASTERSLAVEIC1IC2TDA8932TDA8932OSCREFOSCIOOSCIOOSCREFCOSCREFROSCREFVSSD100nF39kΩVSSDFigure7:MasterslaveconceptintwochipapplicationSeptember2005,version1.734 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893217.5PumpingeffectsWhentheamplifierisusedinaSEconfiguration,aso-called'pumpingeffect'canoccur.Duringoneswitchinginterval,energyistakenfromonesupply(e.g.VDD),whileapartofthatenergyisdeliveredbacktotheothersupplyline(e.g.Vss)andvisaversa.Whenthepowersupplycannotsinkenergy,thevoltageacrosstheoutputcapacitorsofthatpowersupplywillincrease.Thevoltageincreasecausedbythepumpingeffectdependson:•Speakerimpedance•Supplyvoltage•Audiosignalfrequency•Valueofdecouplingcapacitorsonsupplylines•Sourceandsinkcurrentsofotherchannels.Thepumpingeffectshouldnotcauseamalfunctionofeithertheaudioamplifierand/orthepowersupply.Forinstance,thismalfunctioncanbecausedbytriggeringoftheundervoltageorovervoltageprotectionoftheamplifier.BestremedyforpumpingeffectsistousetheTDA8932inthemonofull-bridgeapplicationorincaseofstereohalf-bridgeapplication,adaptthepowersupply(e.g.increasesupplydecouplingcapacitors).Inastereohalfbridgeapplicationpumpingeffectscanbeminimizedbyconnectingaudioinputsinanti-phaseandchangethepolarityofonespeaker.Thisisillustratedinfigure8.IN1+OUT1+AUDIOIN1IN1--+-OUT2IN2-AUDIO-IN2IN2++-+Figure8:Input/speakerconfigurationforstereoSEapplicationforreducingpumpingeffects.September2005,version1.735 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893217.6GainsettingTheinputsignalincombinationwiththespeakerimpedancedeterminestherequiredgain.TheTDA8932hasafixedgainof30dBforSEapplications.Byaddingaresistorof12kΩthegainisreducedby6dB.5k6470nF12k100kAudioin5k6470nFFigure9:Inputconfigurationforreducinggain.17.7LowpassfilterconsiderationsForaflatfrequencyresponse(secondorderButterworthfilter)itisnecessarytochangetheLC-filtercomponents(LxandCx)accordingthespeakerimpedance.Table13showstherequiredcomponentsvaluesincaseofa4Ω,6Ωor8Ωspeakerimpedance.Table13:FiltercomponentsvalueSpeakerimpedanceLxvalueCxvalue[Ω][µH][nF]42268063347084733017.8CurvesmeasuredinreferencedesigntbdSeptember2005,version1.736 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893217.9Typicalapplicationschematics470nF1VSSD/HWVSSD/HW322IN1POSCIO31100nF470nF3IN1NTDA8932HVP130Audioin14DIAGVDDP129VDDP22k100nFOUT15ENGAGEBOOT12815nF470nF3V36POWERUPOUT1277CGNDVSSP126470pF10R10RVP8VDDASTAB125100nF9VSSASTAB224100nFVDDP10OSCREFVSSP223470pF100nF39k47µF10R220uF11HVPREFOUT22215nF12INREFBOOT221OUT213TESTVDDP220VDDP470nF100nF14IN2NHVP219470nF15IN2PDREF18Audioin2100nF100nF16VSSD/HWVSSD/HW17Figure10:Typicalapplicationdiagramfor2xSE(asymmetricalsupply)470nF1VSSD/HWVSSD/HW322IN1POSCIO31Audioin1470nFTDA89323IN1NHVP1304DIAGVDDP129VDDP22k100nF5ENGAGEBOOT12815nF470nF3V36POWERUPOUT1277CGNDVSSP126470pF10R10RVP8VDDASTAB125100nF9VSSASTAB224100nFVDDP10OSCREFVSSP223470pFOut1100nF39k47µF10R220uF11HVPREFOUT22215nF12INREFBOOT22113TESTVDDP220VDDP470nF100nF14IN2NHVP219470nF15IN2PDREF18100nF16VSSD/HWVSSD/HW17Figure11:Typicalapplicationdiagramfor1xBTL(asymmetricalsupply)September2005,version1.737 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA8932470nF1VSSD/HWVSSD/HW32100nF2IN1POSCIO31Synchronize470nFTDA89323IN1NHVP130100nF220µFAudioin14DIAGVDDP129VDDP22kOut15ENGAGEBOOT12815nF470nF3V36POWERUPOUT1277CGNDVSSP126470pF10R10RVP8VDDASTAB125100nF9VSSASTAB224100nFVDDP10OSCREFVSSP223470pF100nF39k47µF10R11HVPREFOUT222220uF15nF12INREFBOOT221Out213TESTVDDP220VDDP470nF100nF14IN2NHVP219470nF15IN2PDREF18Audioin2100nF100nF16VSSD/HWVSSD/HW17470nF1VSSD/HWVSSD/HW32Synchronize2IN1POSCIO31470nFTDA89323IN1NHVP130100nF220µF4DIAGVDDP129VDDP5ENGAGEBOOT12815nF6POWERUPOUT1277CGNDVSSP126470pF10R8VDDASTAB125100nFOut39VSSASTAB224100nF10OSCREFVSSP223470pF10R47µF11HVPREFOUT22215nF12INREFBOOT22113TESTVDDP220VDDP470nF100nF14IN2NHVP219470nF15IN2PDREF18Audioin3100nF16VSSD/HWVSSD/HW17Figure12:Typicalapplicationdiagramfor2xSE+1xBTL(asymmetricalsupply)September2005,version1.738 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893218PACKAGEOUTLINESO32:plasticsmalloutlinepackage;32leads;bodywidth7.5mmSOT287-1DEAXcyHEvMAZ3217QA2AA1(A)3pin1indexθLp116LwMdetailXebp0510mmscaleDIMENSIONS(inchdimensionsarederivedfromtheoriginalmmdimensions)AUNITA1A2A3bpcD(1)E(1)eHELLpQZvwy(1)θmax.0.32.450.490.2720.77.610.651.11.20.95mm2.650.251.271.40.250.250.10.12.250.360.1820.37.410.000.41.00.558oo0.0120.0960.020.0110.810.300.4190.0430.0470.0370inches0.10.010.050.0550.010.010.0040.0040.0890.010.0070.800.290.3940.0160.0390.022Note1.Plasticormetalprotrusionsof0.15mm(0.006inch)maximumpersidearenotincluded.OUTLINEREFERENCESEUROPEANISSUEDATEVERSIONPROJECTIONIECJEDECJEITA00-08-17SOT287-1MO-11903-02-19September2005,version1.739 PhilipsSemiconductorsObjectiveDeviceSpecificationConfidential2×10..25Wclass-DamplifierTDA893219SOLDERINGSeptember2005,version1.740

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