InP 超高频元器件.ppt

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1、IntroductionofInPTechnologyWarrenShihBacksideEngineeringDept.1WhyUseInPMaterialforRFICHighfrequencyHighspeedLownoiseLowpowerconsumption2LargeDiameterInPWaferRequirementCriticalflatness--warpageSurfacequalityspecification--uniformity3ImportantPropertie

2、sofInPHighpeakelectronvelocityHighthermalconductivityHighelectricfieldbreakdown4InPDevices-HEMTsHEMTslowernoise&highergain@higherfrequenciesthanGaAscounterpart*ft&fmax100GHzhigher*noise1dBlower@94GHz*gain50%higher*operatingvoltagehalf*powerconsump

3、tion33%5InPDevices-HBTsHBTslowernoise&highergain@higherfrequenciesthanGaAscounterpart*ft&fmax100GHzhigher*noise1dBlower@94GHz*gain50%higher*operatingvoltagehalf*powerconsumption33%6InPDevices-HEMTsHEMTslowernoise&highergain@higherfrequenciesthan

4、GaAscounterpart*ft&fmax100GHzhigher*noise1dBlower@94GHz*gain50%higher*operatingvoltagehalf*powerconsumption33%7LargeDiameterInPWaferRequirementCriticalflatnessSurfacequalityspecification8CrystalStructureSi(diamondstructure)andInP(zincblendestruct

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