SEMI M36-0699 TEST METHOD FOR MEASURING ETCH PIT DENSITY

SEMI M36-0699 TEST METHOD FOR MEASURING ETCH PIT DENSITY

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1、SEMIM36-0699TESTMETHODFORMEASURINGETCHPITDENSITY(EPD)INLOWDISLOCATIONDENSITYGALLIUMARSENIDEWAFERSThistestmethodwastechnicallyapprovedbytheGlobalCompoundSemiconductorCommitteeandisthedirectresponsibilityoftheJapaneseCompoundSemiconductorMaterialsCommittee.Currenteditionappr

2、ovedbytheJapaneseRegionalStandardsCommitteeonMarch17,1999.InitiallyavailableonSEMIOnLineApril1999;tobepublishedJune1999.andFigure2respectively.Thecountingpointsare1Purposelocatedinthecenterofeachmesh.Inthecaseofa501.1Thisdocumentprovidesamethodtomeasureetchmmdiameterwafert

3、hemeshsizeis5mm.Thetotalpitdensity(EPD)inlowdislocationdensityGaAsnumberofcountingpositionsis69andposition35iswafers.locatedatthecenterofthewafer.Inthecaseof76mmdiameterwaferthemeshsizeis10mm,andthetotal2Scopenumberofcountingpositionis37.Position19islocatedatthecenterofthe

4、wafer.2.1ThistestmethoddescribesaproceduretomeasureEPDof50mmand76mmdiameterroundGaAs5.2CountandrecordthenumberofetchpitsforwaferswithanEPDoflessthan5000/cm2.whichthecoresareinthemeasuringfield.Ifthepitsarecrowdedandaredifficulttocount,increasethe2.2Thistestmethoddoesnotinc

5、ludeGaAswafermagnification.Afterthatcounttheetchpitsandrecordpreparation,suchaswaferslicing,polishingandpittheresultsaswellasthemicroscopemagnification.etching.ThepreparationofGaAswafercanbefoundinaReferencedDocument.5.3RepeatSection5.3forallotherpositions,2through69positi

6、onsinthecaseof50mmdiameter2.3Thisstandarddoesnotpurporttoaddressallofthewafersand2through37positionsinthecaseof76mmsafetyissues.Itistheresponsibilityoftheuserofthisdiameterwafers.standardtoestablishappropriatesafetyandhealthpracticesandtodeterminetheapplicabilityof6Calcula

7、tionsregulationspriortouseofthetestmethod.6.1TheEPDineachmeasuringfieldisthenumberof3ReferencedDocumentpitscounteddividedbythearea.EPD=(Numberofpits)/Area3.1ASTMStandardF140-92—TestMethodforCrystallographicForexample,ifthesizeofmeasuringfieldisexactly12PerfectionofGalliumA

8、rsenidebyMoltenPotassiummm×1mm,theareais0.01cm.Hydroxide(KOH)EtchTechnique.7Report4Appara

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