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1、基于SILVACOTCAD的高压SOILDMOS器件设计[扌商要]SOILDMOS器件是基于LDMOS器件的一种新型功率半导体。S01结构具有工艺简单、寄生电容小、抗辐照能力强、集成密度高等优点,并口可以克服体硅材料的缺点。SOI技术在高可靠超大规模集成电路,高速、低功耗集成电路,微机电系统等领域具有重要的应用。本论文用SILVACOTCAD模拟SOILDMOS的工艺流程,对氧化层厚度、掺杂种类和剂量、注入条件、刻蚀深度和范围等工艺参数进行了模拟,以用于相关的器件设计,并得到主要的电学性能特性曲线。文中在普通结构SOILDMOS器件的基础上进一步引入了沟槽结构SOTLDMOS器件,
2、仿真结果表明,与普通结构SOTLDMOS器件相比,沟槽结构SOILDMOS器件的击穿电压提高了70.5%,导通电阻增加了3&7%。[关键词]击穿电压导通电阻仿真DesignofhighvoltageSOILDMOSdevicesbasedonSILVACOTCADZengHongbinNO.2010850043,ElectronicScienceandTechnologyMajor.2014,InformationEngineeringCollegeofJimeiUniversityAbstract:SOILDMOSdeviceisanewtypepowersemiconducto
3、rwhichisbasedonLDMOSdevice.TheadvantagesofSOIaresimpleprocess,smallparasiticcapacitance,anti-radiation,highintegrationandsoon.AndSOIdeviceswhichcanovercomethedisadvantagesofbulksiliconmaterial.SOItechnologyhasimportantapplicationsinthefieldofVLSIhighreliability,high-speedintegratedcircuitswith
4、lowpowerandMEMS,andsoon.SILVACOTCADsoftwareisusedinthispapertosimulatetheprocessoftheSOILDMOS,andthereareprocessparameterssimulatedfortheassociateddevicedesign,suchasthethicknessoftheoxidelayer,dopingtypeanddose,theconditionofimplantation,thedepthandrangeofetching,andsoon.Thenthemajorelectrica
5、lperformancecharacteristiccurvesisgot.OnthebasisofthenormalSOILDMOSdevice,thepaperfurtherintroducesatrenchstructureSOILDMOSdevices.Thesimulationresultsshowthat,comparedwiththenormalSOILDMOSdevice,thebreakdownvoltageofthetrenchstructureSOILDMOSisincreasedby70.5%,andtheon-resistaneeisincreasedby
6、38.7%.Keywords:breakdownvoltageon-resistancesimulation目录引言1第一章SOI技术21.1SOI技术的特点21.2SOI技术的发展概述21.3S01的制备31.3.1注氧隔离(SIMOX)技术31.3.2智能剥离(SmartCut)技术41.3.3硅片键合与背面腐蚀SOI(BESOT)技术41.4本论文的工作安排5第二章LDMOS器件62.1LDMOS器件62.2LDMOS的特点及应用62.3LDMOS器件的击穿机理62.4SOILDMOS的特点72.5沟槽结构SOILDMOS的器件结构及工作原理72.6本章小结8第三章SOILD
7、MOS器件的制程工艺设计93.1工艺模拟软件知识93.2SOTLDMOS工艺方案设计93.3工艺介绍93.4ATHENA模拟SOILDMOS工艺流程103・5本章彳、结15第四章SOILDMOS器件特性研究174.1器件仿真软件知识174.2电学特性仿真184.2.1击穿电压184.2.2导通电阻194.2.3输出特性研究194.2.4阈值电压214.3本章小结22结论23致谢语24[参考文献]25附录26引言随着半导体工业向o.13um及更小工艺尺寸的器件发展,虽然