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1、Chapter2,Microfabrication(ElectronicsManufacturing)1LearningObjectivesBeabletodescribethebasicprocessesofmicrofabricationBeabletoexplaintheprinciplesofphotolithography.Beabletodescribethebasicmechanismsoftheadditiveprocesses,includingrelativecomparisonsamongthem.PhysicalVaporDepos
2、ition(evaporation,sputtering)ChemicalVaporDepositionBeabletodescribethebasicmechanismsofthesubtractiveprocesses,includingrelativecomparisonsamongthem.WetEtching(isotropic,anisotropic)DryEtching(physical,chemical,physical-chemical)Beabletodescribetheprocessofbondingandpackaging2Wha
3、tisLIGA?LIGAisafabricationprocessforhighaspectratiomicrostructuresconsistingofthreemajorprocesssteps.X-raylithography(LI=lithographie)togenerateprimarymicrostructures.(DXRL=deepX-raylithography,UDXRL=ultra-deepX-raylithography)Electroplating/Electrodeposition(G=Galvanik)toproducem
4、icrostructuresinmetal.Molding(A=Abformung)tobatchproducesecondarymicrostructuresinpolymers,metals,ceramics…3BriefHistoryofLIGAElectrodepositionandX-raylithographyRomankiwetalatIBM,1975.AddingmoldingEhrfeldetalatKfK,1982.InGermany,LIGAwasinitiallyindependentfromsemiconductorindustr
5、y.Guckel(U.Wisc)integratedLIGAwithexistedsemiconductorindustrysothatLIGAbecomesonemajormicrofabricationprocess.Today,moreandmoreprototypeshavebeenfabricated.AndsomeLIGAcompanieshavebeenfoundedandprovidedprofessionalservicestousers.4WhyIsLIGAInteresting?Veryhighaspectratiostructure
6、scanbeachievedHeight(typical)20-500μm,thiscannotbeachievedbystateofartsiliconsurfacemicromachiningHavemorematerialselectivityinfinalproductsCouldbemetal,polymer,andevenceramics.VerticalandbettersurfaceroughnessinsidewallVerticalslope<1μm/mm,Surfaceroughness0.03-0.05μm(max.peaktova
7、lley)ItcanbeappliedinbothMEMSandtraditionalprecisionmanufacturing.5LIGAProcess—X-raylithography6LIGAProcess—Electroplating7LIGAProcess—Molding8LIGAMaterialsPolymersUsedinX-raylithographyperiod.ThematerialsmustbeabletoallowphotochemicalreactionunderexposureunderX-rayThickPMMAisapop
8、ularchoiceMetalsUsedinelectrodepo
