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1、AOD444/AOI44460VN-ChannelMOSFETGeneralDescriptionProductSummaryTheAOD444/AOI444combineadvancedtrenchMOSFETVDS60VtechnologywithalowresistancepackagetoprovideID(atVGS=10V)12AextremelylowRDS(ON).ThosedevicesaresuitableforuseRDS(ON)(atVGS=10V)<60mΩinPWM,loadswitchingandge
2、neralpurposeapplications.RDS(ON)(atVGS=4.5V)<85mΩ100%UISTested100%RgTestedTO252TO-251ADPAKIPAKTopViewBottomViewDTopViewBottomViewDDDSGSGGDGDSGSSAbsoluteMaximumRatingsTA=25°CunlessotherwisenotedParameterSymbolMaximumUnitsDrain-SourceVoltageVDS60VGate-SourceVoltageVGS±2
3、0VContinuousDrainTC=25°C12GIDCurrentTC=100°C9ACPulsedDrainCurrentIDM30ContinuousDrainTA=25°C4IDSMACurrentTA=70°C3CAvalancheCurrentIAS,IAR19ACAvalancheenergyL=0.1mHEAS,EAR18mJTC=25°C20BPDWPowerDissipationTC=100°C10TA=25°C2.1APDSMWPowerDissipationTA=70°C1.3JunctionandSt
4、orageTemperatureRangeTJ,TSTG-55to175°CThermalCharacteristicsParameterSymbolTypMaxUnitsAt≤10sMaximumJunction-to-Ambient17.430°C/WADRθJAMaximumJunction-to-AmbientSteady-State5060°C/WMaximumJunction-to-CaseSteady-StateRθJC47.5°C/WAOD444/AOI444ElectricalCharacteristics(TJ
5、=25°Cunlessotherwisenoted)SymbolParameterConditionsMinTypMaxUnitsSTATICPARAMETERSBVDSSDrain-SourceBreakdownVoltageID=250µA,VGS=0V60VVDS=48V,VGS=0V1IDSSZeroGateVoltageDrainCurrentµATJ=55°C5IGSSGate-BodyleakagecurrentVDS=0V,VGS=±20V100nAVGS(th)GateThresholdVoltageVDS=VG
6、SID=250µA12.43VID(ON)OnstatedraincurrentVGS=10V,VDS=5V30AVGS=10V,ID=12A4760mΩRDS(ON)StaticDrain-SourceOn-ResistanceTJ=125°C85100VGS=4.5V,ID=6A6785mΩgFSForwardTransconductanceVDS=5V,ID=20A14SVSDDiodeForwardVoltageIS=1A,VGS=0V0.741VISMaximumBody-DiodeContinuousCurrent12
7、ADYNAMICPARAMETERSCissInputCapacitance360450540pFCossOutputCapacitanceVGS=0V,VDS=30V,f=1MHz406180pFCrssReverseTransferCapacitance162740pFRgGateresistanceVGS=0V,VDS=0V,f=1MHz0.61.42.0ΩSWITCHINGPARAMETERSQg(10V)TotalGateCharge7.510nCQg(4.5V)TotalGateCharge3.85nCVGS=10V,
8、VDS=30V,ID=12AQgsGateSourceCharge1.2nCQgdGateDrainCharge1.9nCtD(on)Turn-OnDelayTime4.2nstrTurn-OnRiseTimeVGS=10V,VDS=30V,RL=
