《ingaasn文献总结》word版

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1、文献1结构示意图如下：亮点：l引入Sb：降低bandgap，提高latticeconstantl于rf-plasmanitrogensources前方安装偏移盘(Biaseddeflectionplates)生长方法Sample1：GaInNAs(withouttheuseofdeflectionplates)Sample2：GaInNAs(DP)(grownusingdeflectionplates)Sample3：GaInNAsSb(grownusingbiaseddeflectionplates)GaInNAsandGaInNAsSbdouble-heterostructurePINd

2、iodesweregrownattheSolidStateElectronicsLaboratoryatStanfordUniversityon(100)GaAssubstratesusingaload-lockedVarianmodelGenIIsolid-sourceMBEmachinewithnitrogensuppliedbyanSVTAssociatesmodel4.5rf-plasmacell.OneGaInNAsstructurewasgrownwithouttheuseofdeflectionplates(hereafterreferredtoas“GaInNAs”),one

3、GaInNAsstructurewasgrownusingdeflectionplates(hereafterreferredtoas“GaInNAs(DP)”),andathirdstructureincorporatedaGaInNAsSbactivelayer,andwasalsogrownusingbiaseddeflectionplates(hereafterreferredtoas“GaInNAsSb”).Forthesamplesgrownusingthedeflectionplatebias,oneplatewasmaintainedat−40Vandonemaintaine

4、datground.AschematicofthegrowthstructureisillustratedinFig.1.Theactivelayerofeachsamplewasunintentionallydoped.TheactiveGaInNAs(Sb)materialis1μmthick,composedofapproximately1–2%Nandapproximately5–7%In(andapproximately2–6%SbfortheSb-containingsample).Thesecompositionsgavematerialthatwasclosetolattic

5、e-matchedtoGaAs.Aftergrowth,annealingwasperformedonthedilutenitridematerialsinasimilarmannerasthatrequiredtoachievelow-thresholdcurrentlasers,usingarapidthermalannealwitharsenicout-diffusionlimitedbyaGaAsproximitycap.SolarcelldeviceswerefabricatedfromthesesamplesattheNationalRenewableEnergyLaborato

6、ry(NREL).ThefrontcontactsareAuandthebackcontactsareannealedAu/Sn/Au.相关性能:(内量子效率)lTheuseofdeflectionplateshasincreasedtheIQEoftheGaInNAscellfrom56%to68%atmaximum.TheadditionofantimonydrivesthedeviceIQEevenhigher,reaching79%atmaximum.lTheabsorptionedgesofthematerialscloselycorrespondtothebandgapsasme

7、asuredbyPL:GaInNAs,1.08eV;GaInNAs（DP）,1.03eV;andGaInNAsSb,0.92eV.（少子寿命）GaInNAsfilm：0.55nsGaInNAs（DP）film：0.74ns.GaInNAsSb：0.20ns（与其他课题组制作的cells的比较）文献2（即文献1表1文献5）生长技术GaInNAssolarcellsweregrownbysolid-sourceM