二输入与非门或非门版图设计

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1、课程名称Course集成电路设计技术项目名称Item二输入与非门、或非门版图设计与非门电路的版图:・・・"・・・《ccc::::・W2cm•••••••■••■•spc文件（瞬时分析）:*CircuitExtractedbyTannerResearch'sL-EditV7.12/ExtractV4.00;*TDBFile:E:cmosyufeimen,Cell:CellO*ExtractDefinitionFile:C:ProgramFilesTannerEDAL-Editspr^orbn20.ext*Extrac

2、tDateandTime:05/25/2011-10:03・includcH:ml2_125・mdVPowerVDDGND5vaAGNDPULSE(0505n5nlOOn200n)vbBGNDPULSE(0505n5n50nlOOn)•tranIn400n•printtranv(A)v(B)v(F)*WARNING:LayerswithUnassignedAREACapacitance.******

3、Resistor>*WARNING:LayerswithUnassignedFRINGECapacitance-**〈Po1y1-Po1y2Capacitor>*WARNING:LayerswithZeroResistance.*〈PadComment>*

4、itor>*******NODENAME2346ALIASESVDD(34,37)A(29.5,6.5)B(55.5,6.5)F(42.5,6.5)GND(25,-22)MlVDDBF*MlDRAINVDDPMOSL=2uW=9uAD=99pPD=58uGATESOURCEBULK(47.514.549.5AS=54pPS=30u23.5)M2FAVDDVDDPMOSL二2uW=9uAD二54pPD=30uAS二99pPS二58u*M2DRAINGATESOURCEBU

5、LK(39.514.541.523.5)M3FB5GNDNMOSL=2uW=9.5uAD=52.25pPD=30uAS=57pPS=31u*M3DRAINGATESOURCEBULK(47.5-1849.5-&5)M45AGNDGNDNMOSL=2uW=9.5uAD=57pPD=31uAS=52.25pPS=30u*M4DRAINGATESOURCEBULK(39.5-1841.5-8.5)*TotalNodes:6*TotalElements:4*ExtractElapsedTime:0seconds.END与非门电路仿真波形

6、图（瞬时分析）:*3=B(55.5,6.5)*4二F(42.5,6.5)*6=GND(25,-22)AS=54pPS=30u23.5)AS=99pPS二58u23.5)MlVDDBFVDDPMOSL=2uW=9uAD=99pPD=58u*MlDRAINGATESOURCEBULK(47.514.549.5M2FAVDDVDDPMOSL二2uW=9uAD二54pPD=30u*M2DRAINGATESOURCEBULK(39.514.541.5M3FB5GNDNMOSL=2uW=9.5uAD二52.25pPD=30uAS=57pPS

7、=31u*M3DRAINGATESOURCEBULK(47.5-1849.5-8.5)M45AGNDGNDNMOSL=2uW=9.5uAD=57pPD=31uAS=52.25pPS=30u*M4DRAINGATESOURCEBULK(39.5-1841.5-8.5)*TotalNodes:6*TotalElements:4*ExtractElapsedTime:0seconds.END与非门电路仿真波形图（直流分析）:或非门电路的版图:102030405060-一■■■■■■■■■■■■■一■■■■■■■■■■■■■_■■■■■

8、■■■■_■.spc文件(瞬时分析)：*CircuitExtractedbyTannerResearch'sI厂EditV7.12/ExtractV4.00;*TDBFile:E:cmoshuofeimen,Cell:CellO*ExtractDefinit