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ID:61670678
大小:15.18 MB
页数:10页
时间:2021-03-09
《二输入与非门、或非门版图设计.doc》由会员上传分享,免费在线阅读,更多相关内容在应用文档-天天文库。
1、课程名称Course集成电路设计技术项目名称Item二输入与非门、或非门版图设计与非门电路的版图:.spc文件(瞬时分析):*CircuitExtractedbyTannerResearch'sL-EditV7.12/ExtractV4.00;*TDBFile:E:cmosyufeimen,Cell:Cell0*ExtractDefinitionFile:C:ProgramFilesTannerEDAL-Editsprmorbn20.ext*ExtractDateandTime:05/25
2、/2011-10:03.includeH:ml2_125.mdVPowerVDDGND5vaAGNDPULSE(0505n5n100n200n)vbBGNDPULSE(0505n5n50n100n).tran1n400n.printtranv(A)v(B)v(F)*WARNING:LayerswithUnassignedAREACapacitance.*****3、or>**WARNING:LayerswithUnassignedFRINGECapacitance.*********WARNING:LayerswithZeroResistance.**4、ly2Capacitor>***NODENAMEALIASES*1=VDD(34,37)*2=A(29.5,6.5)*3=B(55.5,6.5)*4=F(42.5,6.5)*6=GND(25,-22)M1VDDBFVDDPMOSL=2uW=9uAD=99pPD=58uAS=54pPS=30u*M1DRAINGATESOURCEBULK(47.514.549.523.5)M2FAVDDVDDPMOSL=2uW=9uAD=54pPD=30uAS=95、9pPS=58u*M2DRAINGATESOURCEBULK(39.514.541.523.5)M3FB5GNDNMOSL=2uW=9.5uAD=52.25pPD=30uAS=57pPS=31u*M3DRAINGATESOURCEBULK(47.5-1849.5-8.5)M45AGNDGNDNMOSL=2uW=9.5uAD=57pPD=31uAS=52.25pPS=30u*M4DRAINGATESOURCEBULK(39.5-1841.5-8.5)*TotalNodes:6*TotalElements:6、4*ExtractElapsedTime:0seconds.END与非门电路仿真波形图(瞬时分析):.spc文件(直流分析):*CircuitExtractedbyTannerResearch'sL-EditV7.12/ExtractV4.00;*TDBFile:E:cmosyufeimen,Cell:Cell0*ExtractDefinitionFile:C:ProgramFilesTannerEDAL-Editsprmorbn20.ext*ExtractDateandTime:05/27、5/2011-10:03.includeH:ml2_125.mdVPowerVDDGND5vaAGND5vbBGND5.dcva050.02vb050.02.printdcv(F)*WARNING:LayerswithUnassignedAREACapacitance.*******WARNING:LayerswithUnas8、signedFRINGECapacitance.*********WARNING:LayerswithZeroResistance.**
3、or>**WARNING:LayerswithUnassignedFRINGECapacitance.*********WARNING:LayerswithZeroResistance.**4、ly2Capacitor>***NODENAMEALIASES*1=VDD(34,37)*2=A(29.5,6.5)*3=B(55.5,6.5)*4=F(42.5,6.5)*6=GND(25,-22)M1VDDBFVDDPMOSL=2uW=9uAD=99pPD=58uAS=54pPS=30u*M1DRAINGATESOURCEBULK(47.514.549.523.5)M2FAVDDVDDPMOSL=2uW=9uAD=54pPD=30uAS=95、9pPS=58u*M2DRAINGATESOURCEBULK(39.514.541.523.5)M3FB5GNDNMOSL=2uW=9.5uAD=52.25pPD=30uAS=57pPS=31u*M3DRAINGATESOURCEBULK(47.5-1849.5-8.5)M45AGNDGNDNMOSL=2uW=9.5uAD=57pPD=31uAS=52.25pPS=30u*M4DRAINGATESOURCEBULK(39.5-1841.5-8.5)*TotalNodes:6*TotalElements:6、4*ExtractElapsedTime:0seconds.END与非门电路仿真波形图(瞬时分析):.spc文件(直流分析):*CircuitExtractedbyTannerResearch'sL-EditV7.12/ExtractV4.00;*TDBFile:E:cmosyufeimen,Cell:Cell0*ExtractDefinitionFile:C:ProgramFilesTannerEDAL-Editsprmorbn20.ext*ExtractDateandTime:05/27、5/2011-10:03.includeH:ml2_125.mdVPowerVDDGND5vaAGND5vbBGND5.dcva050.02vb050.02.printdcv(F)*WARNING:LayerswithUnassignedAREACapacitance.*******WARNING:LayerswithUnas8、signedFRINGECapacitance.*********WARNING:LayerswithZeroResistance.**
4、ly2Capacitor>***NODENAMEALIASES*1=VDD(34,37)*2=A(29.5,6.5)*3=B(55.5,6.5)*4=F(42.5,6.5)*6=GND(25,-22)M1VDDBFVDDPMOSL=2uW=9uAD=99pPD=58uAS=54pPS=30u*M1DRAINGATESOURCEBULK(47.514.549.523.5)M2FAVDDVDDPMOSL=2uW=9uAD=54pPD=30uAS=9
5、9pPS=58u*M2DRAINGATESOURCEBULK(39.514.541.523.5)M3FB5GNDNMOSL=2uW=9.5uAD=52.25pPD=30uAS=57pPS=31u*M3DRAINGATESOURCEBULK(47.5-1849.5-8.5)M45AGNDGNDNMOSL=2uW=9.5uAD=57pPD=31uAS=52.25pPS=30u*M4DRAINGATESOURCEBULK(39.5-1841.5-8.5)*TotalNodes:6*TotalElements:
6、4*ExtractElapsedTime:0seconds.END与非门电路仿真波形图(瞬时分析):.spc文件(直流分析):*CircuitExtractedbyTannerResearch'sL-EditV7.12/ExtractV4.00;*TDBFile:E:cmosyufeimen,Cell:Cell0*ExtractDefinitionFile:C:ProgramFilesTannerEDAL-Editsprmorbn20.ext*ExtractDateandTime:05/2
7、5/2011-10:03.includeH:ml2_125.mdVPowerVDDGND5vaAGND5vbBGND5.dcva050.02vb050.02.printdcv(F)*WARNING:LayerswithUnassignedAREACapacitance.*******WARNING:LayerswithUnas
8、signedFRINGECapacitance.*********WARNING:LayerswithZeroResistance.**
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