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1、Contents1.Introduction………………………………………………………………………………………………………(5)1.1HistoryofIII-Nitrideresearch…………..………………………………………………………….(5)1.2BackgroundofsemiconductorsandgroupIII-nitrides………………………………….(7)1.2.1Directandindirectbandgapsemiconductors………………………………….(7)1.2.2Advantagesofsolidstatelighting…………

2、………………………………………….(8)1.2.3III-nitrides………………………………………………………………………………….…….(9)1.2.4SubstratesforthegrowthofGaN………………………………………………….(10)1.3ResearchObjectives………………………………………………………………………..………(11)1.4Thesisorganization……………………………………………………………………………..…….(13)References…………………………………….……………………………………………………

3、…………..(14)2.Metal-organicChemicalvapour………………………………………………….…………………..(16)2.1Mainstructure……………………………………………………..…………………………………..(16)2.1.1Carriergaslines…………………………………………..…………………………………(16)2.1.2Lower-carriergasline/MOsourcebubbler…………..………………………..(18)2.1.3Uppercarriergasline/NH3……………………………………..……

4、………………..(20)2.1.4Closecoupledshowerhead(CCS)reactor………………..…………………….(21)2.2Growthmechanism………………………………………………………………..…………………(22)2.2.1Reactorflowingpattern……………………………………………….………………..(22)2.2.2Chemicalreaction………………………………………………………………………….(23)2.3Operationandmaintenance……………………………………………..………………………

5、(24)2.3.1Epitorcontrollingsystem…………………………………..………………………….(24)2.3.2Epitorgrowthrecipe………………………………………………………………………(25)2.3.3Temperaturecalibration…………………………………………….………………….(25)2.4TypicalgrowthconditionsofIII-nitrides…………………………………….………………(26)2.4.1Conventional2-stepgrowthmethod………………………………….………….

6、(26)2.4.2In-situlasermonitoringsystem……………………………………………………..(26)2.4.3Growthconditionsfortypicalc-planeGaN………………………….…………(28)1051.1.1GrowthconditionsfortypicalAlxGa1-xN/AlyGa1-yMQWstructure….…..(28)1.1.2GrowthconditionsfortypicalInGaN/GaNMQWstructure……………(29)References…………………………………………………………………

7、……………………………..(30)2.Materialcharacterisationandopticalmeasurements…………………………….……….(31)2.1X-raydiffraction………………………………………………………………………………………..(31)2.1.1Basictheory…………………………………………………………………………………..(31)2.1.2WurtziteGaNcrystalstructureandplanes……………………………