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1、ExperimentalevidenceforindexmodulationbycarrierdepletioninSiGe/SimultiplequantumwellstructuresA.Lupua),D.Marris,D.Pascal,J.-L.Cercus,A.Cordatb),V.LeThanhc)andS.LavalInstitutd’ElectroniqueFondamentale,CNRSUMR8622,UniversitéParisSud,91405ORSAYCedex,France(Rec
2、eivedExperimentalresultsfortherefractiveindexvariationobtainedbyholedepletioninSiGe/Simultiplequantumwellsinsertedinareverse-biasedpinjunctionarereported.Theelectroniccontributiontotheindexvariationisunambiguouslyseparatedfromthethermalone.Measuredrefractiv
3、eindexchangesaround4.2´10-5V-1areinquitegoodagreementwithmodeling.PACSnumbers:42.79.-e,42.82.-m,42.82.Ds,12Electrorefractiveindexvariationinwaveguidesplaysanimportantrolefortherealizationofphase/amplitudeopticalmodulatorsaswellasforswitchingandroutingapplic
4、ationsatopticaltelecommunicationwavelengths(1.3µmand1.55µm).HoweverthechallengeistoachievefastandlargeindexmodulationinSilicon-basedwaveguides,whichisnotanobvioustask.Pockelseffectisabsentinbulkunstrainedsilicon,whilerefractiveindexperturbationsproducedbyap
5、pliedfieldsarerathersmallbecauseoftheindirectband-gap.So,foranelectricfieldE=105 V/cm,theindexvariationproducedbyFrantz-KeldyshorKerreffect1isoftheorderof10-6.Amoresignificantindexvariationcanbeobtainedbycarrierinjectionordepletioninapindiode.Depletionopera
6、tionismoreadvantageousthancarrierinjection.Thedrawbacksoftheinjectionoperationarethetimeresponselimitedbytheminoritycarrierlifetimeandthethermalheatinginducedbyalargecurrentforaforwardbiaseddiode.Theuseofcarrierdepletionunderreversebiasoperationoffersmuchfa
7、sterresponsetimeandsmallerheatingeffects.SuchastructurecanbeintegratedinasubmicronSilicon-On-Insulator(SOI)waveguide.Thestructureusedformodulationstudiesisschematicallyrepresentedinfigure1.Thestructureincludes3Si0.8Ge0.2quantumwellsseparatedbySibarrierswith
8、P+d-dopedlayers(1018cm-3)inthemiddle.Thewellthicknessis10nm;thed-dopedlayersare5nmthickwith7.5nmnon-intentionallydopedspacers(nid)oneachside.ThisstackissurroundedbynidSilayersandthewholestructureissand
