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1、MgO缓冲层对Si衬底上制备Fe3Si薄膜性能的影响贵州大学大数据与信息工程学院新型光电子材料与技术研究所采用磁控溅射方法和热加工工艺在n型Si衬底上溅射不同厚度的MgO层并制备Fe-Si薄膜层,退火后形成Fe3Si/MgO/Si多层膜结构。利用MgO缓冲层对退火时Si衬底扩散原子进行屏蔽,并分析MgO层对Fe3Si薄膜结构和电学性质的影响。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和四探针测试仪对Fe3Si薄膜的晶体结构、表而形貌、断而形貌和电阻率进行表征与分析。研宂结果表明:当MgO层厚度为20nm时
2、生成F^Si。.:薄膜,当厚度为50,100,150和200nm时都生成了Fe3Si薄膜,生成的Fe、Si和薄膜以(110)和(211)取向为主。随MgO缓冲层厚度增加,Si衬底扩散原子对Fe3Si薄膜的影响减小,Fe;iSi薄膜的晶格常数逐渐减小,晶粒大小趋向均匀,平均电阻率呈现先增大后减小趋势。研宄结果为后续基于Fe3Si薄膜的器件设计与制备提供了参考。关键词:礆控溅射法;MgO缓冲层;Fe3Si薄膜;晶体结构;电阻率;poundFe3Si[J].PhysicalReview:B,2012,86(17):460
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