自动化专业毕业论文-多晶硅太阳能电池制作工艺概述

自动化专业毕业论文-多晶硅太阳能电池制作工艺概述

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时间:2018-04-16

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1、无锡职业技术学院毕业设计说明书(中英文翻译)PolycrystallinesiliconsolarcellmanufacturecraftoutlineItiswellknown,willhavemanymeritsusingthesolarenergy,thelightbendsdowntheelectricitygenerationtoprovidethemainenergyforthehumanity,butatpresentsays,willhaveenablethesolarenergyelectricitygenerationtohavethebi

2、gmarket,bygeneralconsumeracceptance,isenhancedthesolarcellthephotoelectricitytransferefficiency,reducesbiggestgoalwhichtheproductioncostshouldbewepursues,mayseeitstrendofdevelopmentfromatpresentinternationalsolarcelldevelopingprocessforthemonocrystallinesilicon,thepolycrystallinesil

3、icon,thebelt-shapedsilicon,themembranousmaterial(includingmicritesilicon-basedthinfilm,compoundbasethinfilmanddyethinfilm).Lookedfromtheindustrializationdevelopmentthat,thecenterofgravityhasdevelopedbytheunitcrystaltothepolytropismdirection,theprimarycauseis;[1]maysupplythesolarcell

4、toexpectfrombeginningtoendfewincreasingly;[2]saystothesolarcell,thesquareshapesubstrateismoreworthwhile,obtainsthepolycrystallinesiliconthroughthecastinglawandthedirectcoagulationlawtobepossibletoobtainthesquareshapematerialdirectly;The[3]polycrystallinesiliconproductioncraftmakesth

5、eprogressunceasingly,thecompletelyautomaticcastingstoveeachproductioncycle(50hours)mayproduce200kilogramabovesiliconspindles,thecrystalgrainsizeachievesacentimeterlevel;Because[4]neartenyearmonocrystallinesiliconcrafttheresearchanddevelopmentareveryquick,inwhichcraftisalsoappliedint

6、hepolytropismsiliconcellproduction,forexamplethechoicecorrosionlaunchknot,thebacksurfacefield,thecorrosionfabricsurface,superficialandthebodydeactivation,thethinwirenettingelectrode,usesthesilk-screenprintingtechnologytobepossibletocausethegridelectrodethewidthtoreduceto50microns,ac

7、hievedhighlyabove15microns,thefasthotannealingtechnologyusesinthepolycrystallinesilicontheproductionbeingpossibletoreducethecrafttimegreatly,themonolithichotworkingproceduretimemaycompleteinaminute,usesthiscraftthebatterytransferefficiencywhichmakeson100squarecentimeterpolytropismsi

8、liconchipstosurpass

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