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1、ANovelBuilt-inCMOSTemperatureSensorforVLSICircuitsWangNailong,ZhangShengandZhouRunde(InstituteofMicroelectronics,TsinghuaUniversity,Beijing100084,China)Abstract:AnoveltemperaturesensorisdevelopedandpresentedespeciallyforthepurposeofonlinethermalmonitoringofVLSIchips.Thissensorrequi
2、resverysmallsiliconareaandlowpowerconsumption,andthesimulationresultsshowthatitsaccuracyisintheorderof018℃.TheproposedsensorcanbeeasilyimplementedusingregularCMOSprocesstechnologies,andcanbeeasilyintegratedtoanyVLSIcircuitstoincreasetheirreliability.Keywords:temperaturesensor;therm
3、altestability;frequencyoutput.EEACC:1265A;2560;2570DCLCnumber:TN47 Documentcode:A ArticleID:025324177(2004)03202522051 IntroductionDuetotheadvancesinthefabricaionprocessfieldofintegratedcircuits,thecomponentdensityandtheoverallpowerdissipationofthehighperformanceVLSIchipsincrea
4、secontinuously.Atthebeginningofthiscentury,thepowerdissipatedinasinglechiphasexceeded100W,andtightlypackedchipassembliesasthemultichipmodulescanevendissipatethousandswatts.Therefore,thethermalstateofintegratedcircuitshasbeenalwaysagreatproblemconcernedandisconsideredasabottleneckin
5、increasingtheintegrationofelectronicsystems.Toovercomethisproblem,manyresearchersdevelopedlow2powerdesigntechniquesforVLSIsystems.Inordertoavoidthermaldamages,continuousthermalmonitoringshouldbeappliedduringboththeproductionreliabilitytestingandthefieldoperation.Anefficientwayistob
6、uildtemperaturesensorsintoallVLSIchips,withtheappropriatecircuitryprovidingeasyreadout.Insomeearlierworks,theresearchersusedtheparasitic,lateralorsubstratebipolartransistors,whichcanberealizedinmostoftheCMOSprocesses,asthermalsensors.TheseareusuallyPTATsensors.Theweaknessofthesesen
7、orsisthatthebipolarstructuresarenotwellcharacterizedinaMOSprocess.Thus,althoughtheycanprovideasatisfiectsolutionforagivenprocess,thecircuitscannotberegardedasageneralCMOSapproachandcannotbewidelyused.2 ProblemformulationTherearevarioustemperaturesensorssuitableforthermalstateverifi
8、cationofintegratedcircuitm
