芯控源AGM30P10AP p-mos 30v 23a 11mΩ适用于PD快充_骊微电子

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AGM30P10APProductSummary100%EASGuaranteedGreenDeviceAvailableSuperLowGateChargeBVDSSRDSONIDExcellentCdV/dteffectdecline-30V11mΩ-23AAdvancedhighcelldensityTrenchtechnologyPRPAK3.3X3.3PinConfigurationDescriptionAGM30P10APisthehighcelldensitytrenchedP-chMOSFETs,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuckconverterapplications.PackageMarkingandOrderingInformationDeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantityAGM30P10APAGM30P10APDFN3.3*3.3325mm16mm5000Table1.AbsoluteMaximumRatings(TA=25℃)SymbolParameterValueUnitVDSDrain-SourceVoltage(VGS=0V）-30VVGSGate-SourceVoltage(VDS=0V)±20V(Note1)DrainCurrent-Continuous(Tc=25℃)-23AIDDrainCurrent-Continuous(Tc=100℃)-19AIDM(pluse)DrainCurrent-Continuous@Current-Pulsed(Note2)-62AMaximumPowerDissipation(Tc=25℃)37WPDMaximumPowerDissipation(Tc=100℃)27WEASAvalancheenergy(Note3)75mJTJ,TSTGOperatingJunctionandStorageTemperatureRange-55To150℃Table2.ThermalCharacteristicSymbolParameterTypMaxUnitR1---70℃/WθJAThermalResistanceJunction-ambient(SteadyState)RθJCThermalResistanceJunction-Case1---3.4℃/W深圳市骊微电子科技有限公司www.szlwtech.com现货供应商

1AGM30P10APTable3.ElectricalCharacteristics(TA=25℃unlessotherwisenoted)SymbolParameterConditionsMinTypMaxUnitOn/OffStatesBVDSSDrain-SourceBreakdownVoltageVGS=0VID=250μA-30VIDSSZeroGateVoltageDrainCurrentVDS=-24V,VGS=0V-1μAIGSSGate-BodyLeakageCurrentVGS=±20V,VDS=0V±100nAVGS(th)GateThresholdVoltageVDS=VGS,ID=250μA1.21.32.1VgFSForwardTransconductanceVDS=-5V,ID=-20A30SVGS=-10V,ID=-20A1113.9mΩRDS(ON)Drain-SourceOn-StateResistanceVGS=-4.5V,ID=-15AmΩDynamicCharacteristicsCissInputCapacitance1380pFVDS=-15V,VGS=0V,CossOutputCapacitancepF310F=1MHZCrssReverseTransferCapacitancepF237RgGateresistanceVGS=0V,VDS=0V,f=1.0MHz9ΩSwitchingTimestd(on)Turn-onDelayTimenS8trTurn-onRiseTimeVGS=-10V,VDD=-15V,73nSID=-15A,RGEN=3.3td(off)Turn-OffDelayTime61.8nStfTurn-OffFallTime24.4nSQgTotalGateCharge22nCQgsGate-SourceChargeVGS=-10V,VDS=-25V,ID=-12A8.7nCQgdGate-DrainCharge7.2nCSource-DrainDiodeCharacteristicsISContinuousSourceCurrentVG=VD=0V,ForceCurrent-23AVSDForwardonVoltageVGS=0V,IS=-1A1.0VtrrReverseRecoveryTimeIF=-15A,dI/dt=100A/µs,19ns·TJ=25℃9ncQrrReverseRecoveryChargeNotes1.Themaximumcurrentratingispackagelimited.Notes2.RepetitiveRating:PulsewidthlimitedbymaximumjunctiontemperatureNotes3.EAScondition:TJ=25℃,VDD=15V,VG=10V,RG=25Ω深圳市骊微电子科技有限公司www.szlwtech.com现货供应商

2AGM30P10APTypicalCharacteristics150125VGS=-10VVGS=-7V10075VGS=-5VDrainCurrent(A)D50V=-4.5V-IGSVGS=-3V25000.511.522.533.54-VDS,Drain-to-SourceVoltage(V)Fig.1TypicalOutputCharacteristicsFig.2On-Resistancevs.G-SVoltage1210VDS=-15VID=-15A886TJ=150℃TJ=25℃4SourceCurrent(A)4S-I2GatetoSourceVoltage(V)GS-V000.000.250.500.751.000918273645-VSD,Source-to-DrainVoltage(V)QG,TotalGateCharge(nC)Fig.3ForwardCharacteristicsofReverseFig.4Gate-ChargeCharacteristics1.52.011.5GS(th)0.51.0NormalizedVNormalizedOnResistance0.50-50050100150-50050100150TJ,JunctionTemperature(℃)TJ,JunctionTemperature(℃)Fig.5NormalizedVGS(th)vs.TJFig.6NormalizedRDSONvs.TJ深圳市骊微电子科技有限公司www.szlwtech.com现货供应商

3AGM30P10AP100001000.00F=1.0MHz100.0010usCiss1000100us10.00Coss(A)1msD10ms-ICrss1.00100ms100DCCapacitance(pF)0.10TC=25℃SinglePulse100.01159131721250.1110100-VDS,DraintoSourceVoltage(V)-VDS(V)Fig.7CapacitanceFig.8SafeOperatingArea1)θJCDUTY=0.50.20.10.10.050.020.010.01SINGLEPULSEPDMTONTD=TON/TNormalizedThermalResponse(RTJpeak=TC+PDMxRθJC0.0010.000010.00010.0010.010.1110t,PulseWidth(s)Fig.9NormalizedMaximumTransientThermalImpedanceFig.10SwitchingTimeWaveformFig.11UnclampedInductiveSwitchingWaveform深圳市骊微电子科技有限公司www.szlwtech.com现货供应商

4AGM30P10APPDFN3333PackageOutlineDataDIMENSIONS(unit:mm)SymbolMinTypMaxSymbolMinTypMaxA0.700.750.80b0.250.300.35C0.100.150.25D3.253.353.45D13.003.103.20D21.781.881.98D3--0.13--E3.203.303.40E13.003.153.20E22.392.492.59e0.65BSCH0.300.390.50L0.300.400.50L1--0.13--θ--10°12°M**0.15*Notspecified深圳市骊微电子科技有限公司www.szlwtech.com现货供应商

5AGM30P10APDisclaimers:Informationfurnishedinthisdocumentisbelievedtobeaccurateandreliable.However,ShenzhenCoreControlSourceSemiconductorCo.,Ltd.assumesnoresponsibilityfortheconsequencesofusewithoutconsiderationforsuchinformationnorusebeyondit.Informationmentionedinthisdocumentissubjecttochangewithoutnotice,apartfromthatwhenanagreementissigned,Shenzhencorecontrolsourcecomplieswiththeagreement.Productsandinformationprovidedinthisdocumenthavenoinfringementofpatents.ShenzhenCoreControlSourceSemiconductorCo.,Ltd.assumesnoresponsibilityforanyinfringementofotherrightsofthirdpartieswhichmayresultfromtheuseofsuchproductsandinformation.Thisdocumentisthefirstversionwhichismadein12-Apr-18.Thisdocumentsupersedesandreplacesallinformationpreviouslysupplied.isaregisteredtrademarkofShenzhenCoreControlSourceSemiconductorCo.,Ltd.Copyright©2017ShenzhenCoreControlSourceSemiconductorCo.,Ltd.PrintedAllrightsreserved.深圳市骊微电子科技有限公司www.szlwtech.com现货供应商