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1、APG042N01N-ChannelShielding-GateMosfetFeaturel100V,145ARDS(ON)<4.2mΩ@VGS=10VlAdvancedTrenchPowerMOSFETlProvideExcellentRDS(ON)AndLowGateChargeSchematicdigramApplicationlDC/DCConverterlLoadSwitchforPortableDeviceslBatterySwitchlRectifierTO-220CPackageMarkingandOrderingInformatio
2、nDeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity(PCS)G042N01APG042N01TO-220C-1000ABSOLUTEMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)ParameterSymbolValueUnitDrain-SourceVoltageVDS100VGate-SourceVoltageVGS±20VContinuousDrainCurrent(Ta=25℃)ID145AContinuousDrainCurrent(Ta=
3、100℃)ID105APulsedDrainCurrenr(1)IDM380ASingelPulsedAvalancheEnergy(2)EAS660mJPowerDissipationPD215WThermalResistancefromJunctiontoCaseRθJC0.44℃/WJunctionTemperatureTJ150℃StorageTemperatureTSTG-55~+150℃深圳市骊微电子科技有限公司7APG042N01N-ChannelShielding-GateMosfetMOSFETELECTRICALCHARACTER
4、ISTICS(Ta=25℃unlessotherwisenoted)ParameterSymbolTestConditionMinTypeMaxUnitStaticCharacteristicsDrain-sourcebreakdownvoltageV(BR)DSSVGS=0V,ID=250µA100--VZerogatevoltagedraincurrentIDSSVDS=100V,VGS=0V--1µAGate-bodyleakagecurrentIGSSVGS=±20V,VDS=0V--±100nAGatethresholdvoltage(3)
5、VGS(th)VDS=VGS,ID=250µA234VDrain-sourceon-resistance(3)RDS(on)VGS=10V,ID=70A-3.74.2mΩForwardtranconductance(3)gFSVDS=10V,ID=70A-122-SDynamiccharacteristicsInputCapacitanceCissVDS=50V,VGS=0V,f=1MHz-5678-pFOutputCapacitanceCoss-673-ReverseTransferCapacitanceCrss-27-Switchingchara
6、cteristicsTurn-ondelaytimetd(on)VDD=50V,ID=70A,VGS=10V,RG=25Ω-25-nsTurn-onrisetimetr-33-Turn-offdelaytimetd(off)-37-Turn-offfalltimetf-18-TotalGateChargeQgVDS=50V,ID=70A,VGS=10V-48.5-nCGate-SourceChargeQgs-2-Gate-DrainChargeQgd-32-Source-DrainDiodecharacteristicsDiodeForwardvol
7、tage(3)VDSVGS=0V,IS=140A--1.2VDiodeForwardcurrent(4)IS--140AReverserecoverytimeTrrIs=70A,VGS=0V,dIF/dt=100A/us71nsReverserecoverychargeQrrIs=70A,VGS=0V,dIF/dt=100A/us144nCNotes:1.RepetitiveRating:pulsewidthlimitedbymaximumjunctiontemperature2.EASCondition:TJ=25℃,VDD=50V,RG=20Ω,
8、L=0.5mH3.PulseTest:pulsewidth≤300μs,dutycycle≤2%4.Surf