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ID:61331500
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页数:30页
时间:2021-01-25
《使用直流电弧等离子体喷射合成纳米级掺锑锡氧化物粒子.doc》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库。
1、闪酪牌淳骏刨赉卧耻吭毓英文原文竺仲促且肾漪飑允孬茼激Synthesisofnano-sizedantimony-dopedtinoxide(ATO)particlesusingaDCarcplasmajet帝腼妻疥措醚若筇丿攫跖Keywords:ThermalplasmaAntimony-dopedtinoxide(ATO)Nanopowder蚝辉佳簧赞猓契键攒鲟权Abstrct犬龟屁钱逝馁埏称蠹保屁Nano-sizedantimony-dopedtinoxide(ATO)particlesweresynthesizedusingDCarcplasm
2、ajet.TheprecursorsSnCl4andSbCl5wereinjected衬吴怿揶篡父睫歹袈护搬intotheplasmaflameinthevaporphase.ATOpowdercouldconvenientlybesynthesizedwithoutanyotherpost-treatmentinthisstudy.TocontrolthedopingamountofantimonyintheATOparticles,theSb/Snmolarratiowasusedasanoperatingvariable.Tostudythee
3、ffectofcarriergasontheparticlesize,argonandoxygengaseswereused.TheresultsofXRDandTGAshowthatallSbionspenetratedtheSnO2latticetosubstituteSnions.WiththeincreasedSbCl5concentrationinsourcematerial,theSbdopinglevelwasalsoincreased.Thesizeoftheparticlessynthesizedusingtheargoncarri
4、ergaswasmuchsmallerthanthatoftheparticlespreparedusingtheoxygencarriergas.Fortheargongas,PSAresultsandSEMimagesrevealthattheaverageparticlesizewas19nm.However,fortheoxygengas,theaverageparticlesizewas31nm.郧坞髂缠挢忪姨翎髋咸篇1.Introduction瞳刎葆杰渊旱诓经秃柏邺SnO2isatypicalwidebandgapsemiconducto
5、randitsconductivityisgenerallyrealizedbynon-stoichiometryassociatedwithoxygenvacanciesintheSnO2lattice.However,thecontentofoxygenvacanciesinSnO2is宄镎担鲈卮化冲猞胁闭峻typicallydifficulttocontrol.TinoxidedopedwithSb,Mo,andFhasbeenstudiedinthepastduetotheuniquepropertiesofthedopedtinoxides
6、uchaspreferableconductivityandtransparencyinvisiblelightwavelengthrange.Inparticular,Sbisconsideredthebestdopantduetoitsstability.Antimony-dopedtinoxide(ATO)isann-typesemiconductorwithelectronsinthetin5-basedconductionbandprovidedbytheantimonydopant.Theconductivityandtransparen
7、cycanbecontrolledbyvaryingtheamountofSbdopantinsteadofbymanipulatingthenon-stoichiometry.晋敦卜睦诣睹羲掺鹎妯剂ATOhasbeenstudiedinthepasttomeasureitspropertiesoftheinherentelectrochromismaswellasitscapacityforuseinchargestorageandasacatalyst.AtlowSbdopinglevel,ATOhaspropertiesoftransparen
8、cyatthevisibleregionwithgoodconductivity,whilereflecti
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