铜掺杂碳膜的蒙特卡罗模拟及其电学特性的计算.pdf

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1、第33卷第5期固体电子学研究与进展Vo1．33。No．52013年1O月RESEARCH＆PROGRESSOFSSE0ct．，2O139》j}器件物理ASimulationStudyoftheDepositingProcessandElectricalj}与器PropertiesofCopper—dopedCarbonFilm件《I模{Ie拟vGUoQihang*ZHANGJinyu(InstituteofMicroelectronicsofTsinghuaUniversity，Beijing，100084，CHN)Abstract：Thedepositingp

2、rocessofcopper—dopedcarbon(CuC)filmissimulatedusingMonteCarlomethod．TheCuCfilmismodeledbyaspacegridstructure．ThedepositingprocessofCuCissimulatedbyrandomlydistributingonaspatialgridstructure．TheelectricalpropertiesarecalculatedbysolvingPois—sonSequation．Resultsindicatethatthesurfacer

3、oughnessdecreasesprogressivelyasthecarboncontentinthefilmsincreases。andthattheelectricalresistivityofCuCfilmscontaining20～25ofcarbonisverylowwhereastheresistivityvaluecanbeveryhighwith60～75ofcarboncontent．Allthesimulationsarecomparedwithexperimentallymeasureddata，andthegoodagreementb

4、etweenthemvalidatestheac—curacyofthesimulations．Keywords：CuCfilm；depositingprocess；electricalproperty；MonteCarlomodelEEACC：2520F；0240G铜掺杂碳膜的蒙特卡罗模拟及其电学特性的计算郭启航张进宇(清华大学微电子所，北京，100084)2013-03—18收稿，2013-05—13收改稿摘要：采用蒙特卡罗的方法模拟了铜掺杂碳膜的淀积过程。首先建立空间网格结构，通过在网格结构上随机降落原子来模拟薄膜的淀积过程。薄膜的电学特性通过解泊松方程来

5、计算。仿真结果表明，薄膜表面的粗糙程度随着碳含量的上升而下降；含碳量为2O～25％的薄膜电阻很低而含碳量在6O～75的薄膜电阻则很高。仿真结果与现有实验结果高度吻合，保证了仿真的正确性。关键词：铜掺杂碳膜；淀积过程；电学特性；蒙特卡罗模拟中图分类号：TN302文献标识码：A文章编号：1000—3819(2013)05—0420—05(CuC)filmhasbeenreportedasanewsolid—stateIntroducti0nelectrolytemateria1forcopper—ionicmemoryappli—cation[．Theswitchi

6、ngmechanismisattributedtoResistiverandomaccessmemory(RRAM)istheformationandruptureofCufilamentsintheconsideredapromisingcandidatetoreplaceacon—CuClayer．Itdiffersfromotherfilamentaryventionalcharge—basedmemoryowingtoitssimpleRRAMSinwhichtheamountofmetallicCusourcestructure，excellentsc

7、alability，andlowpowercanbecontrolledduringdevicefabrication_5_6]．Theconsumption]．Recently，copper—dopedcarbon*基金项目：中国国家基础研究计划资助项目(2011CBA00604，2011CB933004)；国家自然科学基金资助项目(61076115)**联系作者：E—mail：guoqihang@163．CON4期GUOQihang，etal：ASimulationStudyoftheDepositingProcessandE1ectrica1Propert

8、iesof⋯421CuC