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ID:55904062
大小:1.21 MB
页数:31页
时间:2020-06-15
《如何读懂英飞凌MOSFET datasheet.pdf》由会员上传分享,免费在线阅读,更多相关内容在教育资源-天天文库。
1、7.186.806.205.00UnderstandingInfineonPowerDevicesDatasheetXJPowerTechnicalWorkshop22thJanuary20156.408.60strictlyconfidential7.186.806.205.00InfineonMOSFET6.408.60strictlyconfidentialHowtochoose…package7.186.80Package6.201.Ingeneral5.00PowerDissipation(PD)Cooling(Rth(jc)/Rth(ja))2.ForH
2、VCreepagedistanceSSO8Layoutforfastswitchingdevice3.ForLVRDS(on)andLstraySpaceTTJ,maxC6.40PDRth(jc)8.602014-11-10strictlyconfidentialCopyright©InfineonTechnologiesAG2014.Allrightsreserved.Page3Howtodefine…VBR(DSS)7.186.80Voltagerating,VBR(DSS)6.20ThevoltageratingisdefinedatroomIPX6
3、0R099C65.00temperature(25゚C).ThemaximumbreakdownvoltageofCoolMOShasstrongpositivetemperaturecoefficient.AnothercriteriaforselectingthevoltageBSC057N03MSratingoftheMOSFETistheovervoltagespikes.Themaximumsteadystatevoltageduringturn–offshouldnotexceed70%-90%oftheratedvoltage6.408.602014-
4、11-10strictlyconfidentialCopyright©InfineonTechnologiesAG2014.Allrightsreserved.Page4Maximumjunctiontemperature7.186.80ForCoolMOS6.20Themaximumjunctiontemperatureusuallyis150Correferthedevice5.00datasheet.IPX60R099C6ForOptiMOSThemaximumjunctiontemperatureisalso150Correferthedevicedatas
5、heet.BSC057N03MSForSiCdiodeThemaximumjunctiontemperatureisgoingto175C.IDH04S60C6.40Infineonrecommended70%-90%deratingfactorofthemaximumjunctiontemperaturewhenusingInfineondevices.8.602014-11-10strictlyconfidentialCopyright©InfineonTechnologiesAG2014.Allrightsreserved.Page5RDS(on)ofMOSFE
6、T7.186.806.20RDS(on)ofMOSFETwillbeincreasedbyincreasingjunctiontemperature.ThispositivetemperaturecoefficienthasabenefitforparallelconnectedMOSFETs.5.00IPX60R099C6BSC057N03MS6.408.602014-11-10strictlyconfidentialCopyright©InfineonTechnologiesAG2014.Allrightsreserved.Page6ContinueId@diff
7、erenttemperature7.186.806.20InMOSFET,draincurrentisacalculatedvalueby:5.00R@150CdsonR(thermalresistancejunction-thJCto-case)T(maximumjunctionjmaxtemperature)T(casetemperature)c6.408.602014-11-10strictlyconfidentialCopyright©InfineonTechnologiesAG2014.Allrightsreserve
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