欢迎来到天天文库
浏览记录
ID:55784473
大小:1.25 MB
页数:6页
时间:2020-06-01
《超薄SiO2层的化合态结构和厚度.pdf》由会员上传分享,免费在线阅读,更多相关内容在应用文档-天天文库。
1、第26卷第5期材料研究学报Vl01.26No.520l2年l0月CHINESEJOURNAL0FMATERIALSRESEARCHOctober2012超薄SiO2层的化合态结构和厚度爿c杜汇伟沈玲丁虎杨洁赵磊马忠权(上海大学理学院物理系索朗光伏材料与器件联合实验室上海200444)摘要用快速热处理对单面抛光硅片进行初始热氧化,800℃下在晶硅基表面制备出15,30和60rain三个时间段的超薄氧化硅层。采用角分辨x射线光电子谱(AfxPs)技术分别分析了3种初始氧化硅层的厚度和化学组态。结果表明,这些氧化硅层的主要成分为
2、Si02,在过渡区存在的Si203、SiO和Si20不饱和态的含量均小于5%。通过控制氧气的含量,使氧化厚度只与时间有关。氧化硅层主相Si02的厚度随时间改变分别为(4.1-4-0.4)nm,(6.2-4-0.6)nm和(9.6+0.5)nlTl。根据SiO2与基底Si的Si2p峰的间距随掠射角度的变化,推断出厚度为4.1和6,2nm的SiO2层内的固定正电荷导致n型si基体能带向上弯曲;而9.6nm的Si02层内的固定正电荷分布随着远离界面逐渐减小,表明固定正电荷主要分布在界面区附近。关键词无机非金属材料,超薄氧化硅,角
3、分辨XPS,快速热处理,固定表面正电荷分类号TB321,TN305文章编号1005—3093(2012)05—0461—06CompoundStatesProfileandThicknessofUltra-thinSiliconDioxideFilmDUHuiweiSHENLingDINGHuYANGJieZHAOLeiMAZhongquan(SHU-SolarER&DLab,DepartmentofPhysics,CollegeSciences,ShanghaiUniversity,Shanghai20044)Suppo
4、rtedbvNationalNaturalScienceFoundationofChinaNo.60876045.ShanghaiLeadingBasicRe-searchProjectNo.09JC1405900.ShanghaiLeadingAcademicDisciplineProjectNo.$30105.andR&DFoun-dationofSHU.SOENsPVJointLabNo.SS—E0700601.ManuscriptreceivedNovember28,2011;inrevisedfromSeptem
5、ber10,2012.术jTowhomcorrespondenceshouldbeaddressed.Te1:(021)66136901.E—maihzqma~shu.edu.cnABSTRACTByrapidthermalprocess.theinitialthermaIoxidationofsingle-sidepolishedsiliconwaferhasbeenaccuratelyobtainedat800℃byoxygenswitchingfor15,30and60minoxidationtimetOfOrmul
6、trathinsiliconoxideIayers.Theultrathinsiliconoxidationlayerswereanalyzed.Theresultsshowthatthemaincompositionoftheselayersissilicondioxide,andthethicknessesare(4.i~0.4)nm,(6.2+0.5)nmand(9.64-0.5)nm,respectively.TheincompleteoxidesofSi203.SiOandSi20alllessthan5%oft
7、otaIoxidationlayerformedattheinterfacebetweenSiandSi02.Forthosesiliconoxidelayerswiththethicknessof4.1and6.2nm。thedifierenceofthebindingenergybetweenSi02andSiincreaseswithdecreaseofgrazeangles.andthekineticenergyofphotoelectronisaffectedbythebuild—inpotentialinthe
8、surfaceofthen-typesiliconsubstrate.However.forthefayerswith9.6nmthicksiliconoxide,thekineticenergyofphotoelectronisdominatedbythepositivechargeinthesili
此文档下载收益归作者所有