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《硅对镉胁迫下水稻幼苗不同叶位叶片类胡萝卜素含量的影响》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、2013年26卷6期西南农业晕报VoL26N0.6SouthwestChinaJournalofAgriculturalSciences2257文章编号:1001-4829(2013)06-2257—04硅对镉胁迫下水稻幼苗不同叶位叶片类胡萝卜素含量的影响黄秋婵,韦友欢。,许元明,唐鸣(广西民族师范学院化学与生物工程系,广西崇左532200)摘要:通过水培试验,研究不同硅浓度(O、3O、80、130、180mg·L~SiO2)对锅(4.0mg·L-1Cd)胁迫下水稻幼苗不同叶位叶片胡萝素、叶黄素、总类胡萝素含量的影响。结果表明:适当浓度硅(30—8O
2、mg·L-。SiO2)可提高锅胁迫下水稻幼苗倒5叶位叶片类胡萝素含量,且80mg·L~SiO2达到最佳效果,但过高浓度(130—180mg·L~SiO2)对水稻幼苗倒5叶位叶片类胡萝素含量有一定的抑制作用;倒4叶位的3种色素含量均随着SiO2浓度的增加而呈上升趋势,当SiO2浓度为180mg‘L-1时,3种色素含量达到最高(O.3820、0.2372、0.6192mg·8~FW),分别为单独锅胁迫下的99.61、l12.31、104.29%;倒3叶位叶片的胡萝素、叶黄素、总类胡萝卜素含量随着SiO2的增加呈现先降后升的趋势,当SiO2浓度为180mg
3、·L-1时,三者均达到最大值,分别为0.4772、0.3060、0.8832mg·gFw;而硅对镉胁迫下水稻幼苗倒2、倒1叶位的3种色素含量的变化趋势影响很小。关键词:硅;镉胁迫;水稻幼苗;类胡萝卜素中图分类号:S631.1文献标识码:AEffectofSiliconunderCadmiumStressonCarotenoidsContentsofSeedlingsinOryzasativaL.atDiferentLeavesPositionHUANGQiu—than,WEIYou-huan’,XUYuan·ming,TANGMing(Departm
4、entofChemistryandBiologicalEngineering。GuangxiNormalUniversityforNationalities,GuangxiChongsuo532200,China)Abstract:Efectsofsiliconundercadmium8h嘲oncarotene.1uteinandcarotenoidscontentofOrymsat/mL.seedlingsindiferentleavespesitionwerestudiedbyhydroponicsculturemethod.嘶口sat/vaL.
5、seedlingsweretreatedwiththeconcentrationof4.0mg·L’Cdand0,30,80,130,180m8·L—SiO2.111eresultsshowedthatappropriateconcentrationofsilicon(30—80mg·L~SiO2)underCdsires8couldimprovethecarotenoidscontentinthefltthleaffromthetopofDsativaL.seedlings,and80mg·L~SiO2achievedthebestresults,
6、butthehJghconcentration(130—180mg·L~SiO2)restrainedthecarotenoidscontentofthe船hleaffromthetopofOryzasativaLseedlings.ThreepigmentscontentofthefifIIleaffromthetopshowedanincreasingtrendwiththeincreaseofSi02concentration.WiththeSIO2concentrationof180mg·L~,thethreepigmentscontentr
7、eachedthehi出eBt(0.3820,0.2372,0.6192mg·L~.FW),whichwere99.61%,112.3l%and104.29%undersolecadmiumstress.WithincreasingSiO2,thecarotene,luteinandcarotenoidscon-tentinthe鼢hleaffromthe10pofOryzasativaL.seedlingswentdownthenup.矾enSi02concentrationwas180mg·L~,allreachedthemaximum(0.47
8、72,0.3060,0.8832mg·L~.FW)。buttheefectsofsiliconunderca
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