三种CuCr触头材料对真空灭弧室投切背靠背电容器组性能的影响-论文.pdf

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1、电工材料2014No.5王小军等：三种CuCr触头材料对真空灭弧室投切背靠背电容器组性能的影响3?????????????研究·分析?????????????三种CuCr触头材料对真空灭弧室投切背靠背电容器组性能的影响11112333王小军，刘凯，王文斌，艾璇，张颖瑶，杨和，李永辉，刘志远（1.陕西斯瑞工业有限责任公司，西安710049；2.同济大学，上海201804；3.西安交通大学电力设备电气绝缘国家重点实验室，西安710049）摘要：为研究三种不同触头材料（真空熔渗CuCr50、真空熔铸CuCr40Te0.

2、005、电弧熔炼CuCr50）对真空灭弧室投切背靠背电容器组性能的影响，将采用三种不同材料制备的触头各装配在三只相同的12kV等级真空灭弧室中，每只真空灭弧室经过80次背靠背电容器组合分操作，高频涌流设定为幅值8kA、频率3.8kHz。结果表明：真空熔渗CuCr50、真空熔铸CuCr40Te0.005以及电弧熔炼CuCr50的平均重击穿概率分别为6.7%、5.8%、8.3%，重击穿现象主要发生于恢复电压持续时间的1/4T与10T之间（T表示恢复电压周期20ms）；复燃现象多次出现，真空熔铸CuCr40Te0.00

3、5（1次）<电弧熔炼CuCr50（9次）<真空熔渗CuCr50（10次）。关键词：真空灭弧室；触头材料；背靠背电容器；高频涌流；重击穿++中图分类号：TM501.3；TM561.5；TG146.11文献标志码：A文章编号：1671-8887（2014）05-0003-05EffectsofThreeCuCrContactMaterialsonPropertiesofBack-to-backCapacitorBanksSwitchingPerformanceinVacuumInterrupters1111WANGX

4、iao-jun,LIUKai,WANGWen-bin,AIXuan,2333ZHANGYing-yao,YANGHe,LIYong-hui,LIUZhi-yuan(1.ShaanxiSiruiIndustriesCo.,Ltd.,Xi’an710077,China;2.TongjiUniversity,Shanghai201804,China;3.StateKeyLaboratoryofElectricalInsulationandPowerEquipment,Xi’anJiaotongUniversity,Xi

5、’an710049,China)Abstract:Thispaperinvestigatestheperformanceofback-to-backcapacitorbankswitchinginvacuuminterrupters(VIs)withcontactspreparedbythreedifferenttechnologies,includinginfiltrationCuCr50,vacuuminductionmeltingCuCr40Te0.005,andvacuumarcmeltingCuCr50

6、.Eachkindofcontactsisinstalledinthree12kVVIsandtheVIsundergo80closing/openingoperationsofback-to-backcapacitorbankswitchingtestsataninrushcurrentof8kA(peakvalue,frequency3.8kHz).ResultsshowthattheaveragevaluesoftherestrikeprobabilityoftheVIsforeachcontactmate

7、rialareasfollowing:thevacuuminductionmeltingCuCr40Te0.005is5.8%;theinfiltrationCuCr50is6.7%;andthevacuumarcmeltingCuCr50is8.3%.ForallVIs,therestrikesmainlyoccurbetween1/4Tand10Toftherecoveryvoltage(T,thecycleoftherecoveryvoltage,is20ms).Reignitionalsooccursbe

8、fore1/4T,andtheoccurrencenumberasfollows:vacuuminductionmeltingCuCr40Te0.005(1time)