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1、AOD609ComplementaryEnhancementModeFieldEffectTransistorGeneralDescriptionFeaturesTheAOD609usesadvancedtrenchtechnologyn-channelMOSFETstoprovideexcellentRDS(ON)andlowgateVDS(V)=40V,ID=12A(VGS=10V)charge.ThecomplementaryMOSFETsmaybeusedRDS(ON)<30mΩ(VGS=10V)inH-bridge,Invertersandotherapplications.RDS(
2、ON)<40mΩ(VGS=4.5V)p-channel-RoHSCompliantVDS(V)=-40V,ID=-12A(VGS=-10V)-HalogenFree*RDS(ON)<45mΩ(VGS=-10V)RDS(ON)<66mΩ(VGS=-4.5V)100%UISTested!100%RgTested!TO-252-4LD-PAKBottomViewTopViewD1/D2TopViewD1/D2DrainConnectedtoTabG1G2G2S1S2S2G1n-channelp-channelS1AbsoluteMaximumRatingsTA=25°Cunlessotherwise
3、notedParameterSymbolMaxn-channelMaxp-channelUnitsDrain-SourceVoltageVDS40-40VGate-SourceVoltageVGS±20±20VContinuousDrainTC=25°C12-12B,HCurrentTC=100°CID12-12BAPulsedDrainCurrentIDM30-30CAvalancheCurrentIAR14-20CRepetitiveavalancheenergyL=0.1mHEAR9.820mJTC=25°C2730PowerDissipationPDWTC=100°C1415TA=25
4、°C22PowerDissipationPDSMWTA=70°C1.31.3JunctionandStorageTemperatureRangeTJ,TSTG-55to175-55to175°CThermalCharacteristics:n-channelandp-channelParameterSymbolDeviceTypMaxUnitsA,Dt≤10sMaximumJunction-to-Ambientn-ch17.425°C/WA,DRθJAMaximumJunction-to-AmbientSteady-Staten-ch5060°C/WCSteady-StateRn-ch45.5
5、°C/WMaximumJunction-to-LeadθJCA,Dt≤10sMaximumJunction-to-Ambientp-ch16.725°C/WA,DRθJAMaximumJunction-to-AmbientSteady-Statep-ch5060°C/WCSteady-StateRp-ch3.55°C/WMaximumJunction-to-LeadθJCAlpha&OmegaSemiconductor,Ltd.www.aosmd.comAOD609NChannelElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)Sym
6、bolParameterConditionsMinTypMaxUnitsSTATICPARAMETERSBVDSSDrain-SourceBreakdownVoltageID=250µA,VGS=0V40VVDS=40V,VGS=0V1IDSSZeroGateVoltageDrainCurrentµATJ=55°C5IGSSGate-BodyleakagecurrentVDS=0V,VGS=±20V±100nAVGS(th)GateThresholdVoltageVDS=VGSID=250µA1.72.53VID(ON)OnstatedraincurrentVGS=10V,VDS=5V30AV
7、GS=10V,ID=12A2430RDS(ON)StaticDrain-SourceOn-ResistanceTJ=125°C3746mΩVGS=4.5V,ID=8A3140gFSForwardTransconductanceVDS=5V,ID=12A25SVSDDiodeForwardVoltageIS=1A,VGS=0V0.761VISMaximumBody-DiodeContinuousCu
