Considerations for WDM NRZ linksCMOS-Integrated Silicon Photonics case WDM NRZ链路地考虑: CMOS集成硅光子盒.pdf

Considerations for WDM NRZ linksCMOS-Integrated Silicon Photonics case WDM NRZ链路地考虑: CMOS集成硅光子盒.pdf

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时间:2020-03-27

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1、ConsiderationsforWDMNRZlinks:CMOS-IntegratedSiliconPhotonicscaseYuriiVlasovIBM1March2012Introduction•Stepfunctioncostreductionisneedednowell_01_1111_NG100GOPTX.pdf•CostofSMsolutionismostlydefinedbymodulecostkipp_01_0112_NG100GOPTX.pdf•PAMmodulationisunderconsiderationbhoja_01_011

2、2_NG100GOPTX.pdfszczepanek_01_0112_NG100GOPTX.pdf–Laserisalargestpartofmodulecost–PAMmodulationisusingasinglelaser•CMOS-integratedWDMNRZisconsideredhere–LANWDM,Uncooled,Retimed–Linkbudget3-4dB–Linklength2km2March2012Single-dieWDMNRZblockdiagramDFB*ARRAY25G25G25G25GTX3CDRDRVMOD4:1

3、TX2CDRDRVMODWDMSMFTX1TXCDRDRVMODMUX25G25G25G25GTX0CDRDRVMOD25G25G25G25GRX3CDRTIA/LAPDRX2CDRTIA/LAPD4:1SMFRX1CDRTIA/LAPDWDMRX25G25G25G25GdeMUXRX0CDRTIA/LAPDCAUI4100GBASE_nr4*DFBArrayisasinglediecontaining4DCDFBlasers*Otherimplementationspossible3March2012Technicalfeasibility•Examp

4、le:8channelWDMat1490nm3-stagecascadedMZIlattice1234567850umNoadd-oncharges:samemaskandsameprocessingasCMOSFETsHighyieldanduniformitypassivefiltering–noactivetuningrequired•4channelLANWDMat1310nmisaneasiertask4March2012ScalingofCMOS-integratedPhotonics•ScalingofPhotonicsFirstte

5、chnologynodethatcanyieldproduct-stablepassiveWDMisthebest–193nmlithographycancontroltheLER(lineedgeroughness)variationwithin9nm(3σ)–Diffraction-limitedscaledLANWDMcanbeyieldedbyprocesscontrol–Noneedtoindividuallytunephasedelaystocompensateforfabrication-inducedphaseerrors–Further

6、scalingtoadvancedCMOSnodeswouldallowtocontrolLERmuchbetter,howeverwillntodecreasethesizeoftheWDM5March2012ScalingofCMOS-integratedPhotonics•ScalingofCMOSAMScircuitsFirsttechnologynodethatcanyieldproduct-stable25/28GbpsAMScircuitsincludingdrivers,amps,CDR,etc.isthebest–AdvancedCMO

7、Snodeswillhavehigherbandwidth–HoweverscalingofAMScircuitsisnotfollowingthesametrendasdigitalscaling:muchlesspowerandareasavings–SignificantlyincreasedNRE,mask/stepchargesforadvancednodes6March2012ChoiceofCMOStechnologynodeOptimumtechnologynodesIEEEComm.Mag.,February2012,Y.Vlasov“

8、SinanophotonicsforComputercombeyond100G”

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