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ID:52233416
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页数:8页
时间:2020-03-25
《SEC锁存型霍尔效应传感器SS569规格书.pdf》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、SS569HallLatch-HighSensitivityPackagesFeaturesandBenefits–Wideoperatingvoltagerangefrom2.5Vto24V–Highmagneticsensitivity–Multi-purpose–CMOStechnology–Lowcurrentconsumption–Chopper-stabilizedamplifierstage–Outputdriverwithinternalpull-upresistor–Superiortemperaturestabilit
2、y–Insensitivetophysicalstress–TinySOT233LorflatSIP3L3pinSOT23(suffixSO)3pinSIP(suffixUA)bothRoHSCompliantpackagesFunctionalBlockDiagramApplicationExamples–Automotive,ConsumerandIndustrialVDD–Solid-stateswitch–BrushlessDCmotorcommutationVoltage–SpeeddetectionRegulatorRpull
3、OUT–Angularpositiondetection–LinearpositiondetectionChopper–ProximitydetectionHallPlateGNDGeneralDescriptionUAPackageSOPackageTheSS569isabipolarHalleffectsensorICfabricatedPin1–VDDPin1–VDDfrommixedsignalCMOStechnology.ThedevicePin2–GNDPin2–OUTintegratesavoltageregulator,H
4、allsensorwithdynamicPin3–OUTPin3–GNDoffsetcancellationsystem,Schmitttriggerandanoutputdriverwithinternalpull-upresistor,allinasinglepackage.Itincorporatesadvancedchopperstabilizationtechniquestoprovideaccurateandstablemagneticswitchpoints.TherearemanyapplicationsforthisHE
5、D–HallElectronicDevice-inadditiontothoselistedabove.Thedesign,specificationsandperformancehavebeenoptimizedforcommutationapplicationsin5Vand12VbrushlessDCmotors.Thankstoitswideoperatingvoltagerangeandextendedchoiceoftemperaturerange,itisquitesuitableforuseinautomotive,ind
6、ustrialandconsumerapplications.ThedeviceisdeliveredinaSmallOutlineTransistor(SOT)forsurfacemountprocessorinaPlasticSingleInLine(SIP3Lflat)forthrough-holemount.Both3-leadpackagesareRoHScompliant.1V2.10May1,2012SS569HallLatch-HighSensitivityGlossaryofTermsMilliTesla(mT),Gau
7、ssUnitsofmagneticfluxdensity:1mT=10GaussRoHSRestrictionofHazardousSubstancesSOTSmallOutlineTransistor(SOTpackage)-alsoreferredwiththepackagecode“SO”ESDElectro-StaticDischargeBLDCBrush-LessDirect-CurrentOperatingPoint(BOP)Magneticfluxdensityappliedonthebrandedsideofthepack
8、agewhichturnstheoutputdriverON(VOUT=VDSon)ReleasePoint(BRP)Magneticfluxdensityappliedonthebrande
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