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1、半导体封装制程与设备材料知识介绍半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）－封装后段（MARK-PLANT）－测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。半导体制程Oxidization(氧化处理)Lithography(微影)Etching(蚀刻)DiffusionIonImplantation(扩散离子植入)Deposition(沉积)WaferInspection(晶圆检查)Grind&Dicing(晶圓研磨及切割
2、)DieAttach(上片)WireBonding(焊线)Molding(塑封)Package(包装)WaferCutting(晶圆切断)WaferReduce(晶圆减薄)LaserCut&packagesaw(切割成型)Testing(测试)Lasermark(激光印字)IC制造开始前段結束后段封装开始製造完成封装型式概述IC封装型式可以分为两大类，一为引脚插入型，另一为表面黏着型构装型态构装名称常见应用产品SingleIn-LinePackage(SIP）PowerTransistorDualIn-LinePackage(DIP）SRAM,ROM
3、,EPROM,EEPROM,FLASH,MicrocontrollerZigzagIn-LinePackage(ZIP）DRAM,SRAMSmallOutlinePackage(SOP）Linear,Logic,DRAM,SRAMPlasticLeadedChipCarrier(PLCC）256KDRAM,ROM,SRAM,EPROM,EEPROM,FLASH,MicrocontrollerSmallOutlinePackage(SOJ）DRAM,SRAM,EPROM,EEPROM,FLASHQuadFlatPackage(QFP）Microproc
4、essorBALLGridArray(BGA）Microprocessor封裝型式(PACKAGE)ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)8~64DIPDualIn-linePackagePlastic2.54mm(100miles)1directionlead3~25SIPSingleIn-linePackage封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/O
5、TypicalFeaturesPlastic2.54mm(100miles)1directionlead16~24ZIPZigzagIn-linePackagePlastic1.778mm(70miles)20~64S-DIPShrinkDualIn-linePackage封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)half-sizepitchinthewidthdirection24~32SK-DIPSki
6、nnyDualIn-linePackageCeramicPlastic2.54mm(100miles)PBGAPinGridArray封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic1.27mm(50miles)2directionlead8~40SOPSmallOutlinePackagePlastic1.0,0.8,0.65mm4directionlead88~200QFPQuad-FlatPack封裝型式SurfaceMountShapeMaterialLea
7、dPitchNoofI/OTypicalFeaturesCeramic1.27,0.762mm(50,30miles)2,4directionlead20~80FPGFlatPackageofGlassCeramic1.27,1.016,0.762mm(50,40,30miles)20~40LCCLeadlessChipCarrier封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27mm(50miles)j-shapebend4directionlead18~
8、124PLCCPlasticLeadedChipCarrierCeramic0.5mm32~200VSQFV
