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1、纳米ZnO论文：ZAO靶材的制备及性能测试【中文摘要】ZAO是在ZnO中掺杂少量的Al2O3,形成的一种n型半导体。它的性能可以与ITO(Sn2O3:In)相媲美,因此ZAO目前越来越受到广泛的重视。本文用直接沉淀法制备纳米ZnO、Al2O3粉体,高温能量球磨法制备纳米ZAO复合粉体,在此基础上研究了ZAO靶材的制备条件对其性能的影响。以ZnSO4·7H2O和NH4HCO3为原料,用直接沉淀法制备纳米ZnO粉体。讨论了锌离子浓度、煅烧温度对粉体性能的影响。以AICl3·6H2O和NH4HCO3为原料,用直接沉淀法制备纳米
2、Al2O3粉体。分别采用马弗炉高温煅烧和高温能量球磨两种方法制备ZAO复合粉体。用差热-热重(TG-DTA)、X射线衍射(XRD)、扫描电镜(SEM)等检测方法对粉体进行了性能表征。讨论了Al2O3掺杂量、烧结温度对ZAO靶材电阻率、致密度的影响。实验结果表明：在最佳条件(溶液pH=7.5、反应温度为80℃、NH4HCO3溶液浓度为1.6mol/L、Zn2+浓度为0.5mol/L、煅烧温度为700℃)下制得的纳米ZnO粉体的平均粒径约为47nm,在1100℃煅烧制备的Al2O3粉体的平均粒径约为50nm,粒度分布均匀,表
3、面形貌呈球型,纯度高。通过对比马弗炉和球磨机两种方法制备的ZAO复合粉体的平均粒径大小,粒度分布,以及表面形貌等,可知高温能量球磨法能在较低温度下制得性能良好的纳米粉体材料。ZAO靶材的最佳制备条件：Al2O3质量掺杂量为3%,烧结温度为1300℃,此条件下制备的靶材的电阻率为8.2×10-2Ω·cm,相对密度为90.8%。【英文摘要】ZAOisann-typesemiconductorformedbydopingasmallquantityofAl2O3inZnO.Recently,theZAOgetsmoreandm
4、oreattentionforitsPropertiescapabilitywhichisasgoodasITO(Sn2O3:In).Inthispaper,nanoZnOandAl2O3aresynthesizedbyamethodofdirectprecipitation,andZAOnanocompositionpowderispreparedbyamechanicallyballmillingmethodathightemperature.Inaddition,theinfluenceofpreparationc
5、onditionsonthepropertiesoftheZAOtargetisdiscussed.TheZnOnanopowderispreparedbythemethodofdirectprecipitationthroughtakingZnSO4·7H2OandNH4HCO3asrawmaterials.TheinfluenceofZn2+concentrationandsinteringtemperatureonitspropertiesisdiscussed.Inthesameway,theAl2O3nanop
6、owderispreparedbythemethodofdirectprecipitationthroughtakingAlCl3·6H2OandNH4HCO3asrawmaterials.Finally,thepropertiesofthepowderarecharacterizedbymeansofthermogravimetry-differentialthermalanalysis(TG-DTA),X-raydiffraction(XRD),scanningelectronmicroscope(SEM).Thei
7、nfluenceofdopingamountofAl2O3andsinteringtemperatureontheelectricresistivityandconsistencyoftheZAOtarget.TheresultsshowthatthemeanparticlesizeoftheZnOnanopowderpreparedundertheoptimalexperimentalconditionsisabout47nm.Theoptimalexperimentalconditionsare7.5ofpHvalu
8、e,80℃ofreactiontemperature,1.6mol/LoftheconcentrationofNH4HCO3solution,0.5mol/LoftheconcentrationofZn2+and700℃ofthesinteringtemperature.Inaddition,themeanparti
