电子束暴光介绍.ppt

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1、ElectronBeamLithographyBastienRipocheLaurentRobinJavariaAhmadEnricHerreroAbellanasPatterningtechniquesTheelectronbeamlithographyApplicationsoftheEBLFutureoportunitiesforEBLCriteriumsaboutdifferenttechniquesResolutionSpeedEasyfabricationCostPatterningTechniquesPatterningTech

2、niquesOpticalLithographya)DeepUltarvioletLithographyb)ExtremeUltravioletLithographyc)XRaysNanoimprint1)OpticalLithographyPhotoresistiveresinePatterns:MasksWavelenghtresolutiondependantResolutionLimitsContactAdvantages:GoodresolutionDrawbacks:MasksthinandflexibleUse->defe

3、ctsResolutionLimitsProximityAdvantages:MaskslifetimehighDrawbacks:ResolutionnotasgoodDiffractionFresneldiffractionGap~20-50μmResolutionLimitsProjectionAdvantages:GoodresolutionNodeteriorationImagesmallerthanmaskDrawbacks:FraunhofferdiffractionCompromisebetweenresolutionand

4、depthoffocusb)ExtremeUltravioletLithographySmallwavelenghtBetterresolutionNolences:mirrorsLaserplasmasources10nmc)XRay<1nmforMedicalpurposesProblemsofmasksLences,mirrorsDifficulttoproduce2)Nanoimprint2techniques:HeatresineCooldownUVradiationsEUVsooninfabricationNanoimpri

5、ntEbeamfor22nmXRaysdifficultPatterningTechniquesTheelectronbeamlithographyTypesofEBLElectronBeamDirectWriteElectronProjectionLithographyBragg-Fresnellensforx-raysPaulScherrerInstituteElectronBeamDirectWriteAnelectrongunorelectronsourcethatsuppliestheelectrons.Anelectronc

6、olumnthat'shapes'andfocusestheelectronbeam.Amechanicalstagethatpositionsthewaferundertheelectronbeam.Awaferhandlingsystemthatautomaticallyfeedswaferstothesystemandunloadsthemafterprocessing.Acomputersystemthatcontrolstheequipment.ElectronBeamDirectWriteTypesofelectrongunsTh

7、ermoionicFieldemissionWrite-field(WF)ScanningmethodsRasterscanVectorscanRaith150Manual(NanostructurePhysicsDept.KTH)AndersLiljeborgSpecifications,arealexampleRaith150Beamsize≤ 2nm@20keVBeamenergy100eV-30keVMinimumlinewidth20nmImportfileformatGDSII,DXF,CIF,ASCII,BMPElectronP

8、rojectionLithographyElectronBeamDirectWriteSCALPEL(BellLaboratoriesandLucenttechno