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ID:48714483
大小:8.70 MB
页数:54页
时间:2020-01-19
《基于扫描电镜的电子束曝光系统Raith.ppt》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、基于扫描电镜的电子束曝光系统RaithGmbHElphyplus主要内容扫描电子显微镜介绍Raith电子束曝光系统电子束曝光图形制作曝光参数对准操作纳米器件制作的主要步骤XL30SFEG(atopperformingfieldemissionSEM)Accelerationvoltage:200V30kVResolution:1.5nmat>10kV,2.5nmat1kVElectronspot~1nm,Resolution~1nmSTEMwithinSEM!!+CLdetector电子发射枪电子透镜原理Electrongu
2、nproducesbeamofmonochromaticelectrons.Firstcondenserlensformsbeamandlimitscurrent("coarseknob").Condenserapertureeliminateshigh-angleelectrons.Secondcondenserlensformsthinner,coherentbeam("fineknob").Objectiveaperture(usu.user-selectable)furthereliminateshigh-angleele
3、ctronsfrombeam.Beam"scanned"bydeflectioncoilstoformimage.Finalobjectivelensfocusesbeamontospecimen.Beaminteractswithsampleandoutgoingelectronsaredetected.Detectorcountselectronsatgivenlocationanddisplaysintensity.Processrepeateduntilscanisfinished(usu.30frames/sec).Ca
4、thodaluminescenceSecondarye–Backscatterede–Incidente–ElasticallyScatterede–InelasticallyScatterede–Unscatterede–X-raysAugere–电子相互作用Causedbyincidentelectronpassing"near"sampleatomandionizinganelectron(inelasticprocess).Ionizedelectronleavessamplewithverysmallkineticene
5、rgy(5eV)andiscalled"secondaryelectron".(Eachincidentelectroncanproduceseveralsecondaryelectrons.)Productionofsecondaryelectronsistopographyrelated.Onlysecondariesnearsurface(<10nm)exitsample.FEWERsecondarye–escapeMOREsecondarye–escape二次电子的形成如何生成二次电子像Secondaryelectron
6、saregeneratedbytheinteractionoftheincidentelectronbeamandthesample.Thesecondaryelectronsemergeatallangles.Theseelectronsgatheredbyelectrostaticallyattractingthemtothedetector.Knowingboththeintensityofsecondaryelectronsemittedandpositionofthebeam,animageisconstructedel
7、ectronically.secondarye-detectorincidente-beamemittede-~+12,000VbeamlocationsignalintensityRaith电子束曝光系统曝光精度<30nm,器件套刻精度~50nmBeamblanker图形发生器BeamblankerAmplifier控制系统界面BeamblankingFaraday圆筒——测电流工作方式-高斯束、矢量扫描、固定工作台Elphyplus主控制界面曝光图形的制作图形格式:.CSF或者.GDS常用软件:elphyplus-GDSII
8、databaseL-editAutoCAD等等曝光之前,必须先知道曝什么!增加图层选定图层选定图层显示绘图格点改变绘图格点间距选用画笔曝光图形设计注意事项最小尺寸:线宽、间距(考虑临近效应)对准标记要适合(多用十字)需要曝光的图形要远离对准标记两层
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