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ID:48025265
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页数:37页
时间:2020-01-29
《高速MOSFET栅极驱动电路的设计与应用指南.pdf》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、DesignAndApplicationGuideForHighSpeedMOSFETGateDriveCircuitsByLaszloBaloghABSTRACTThemainpurposeofthispaperistodemonstrateasystematicapproachtodesignhighperformancegatedrivecircuitsforhighspeedswitchingapplications.Itisaninformativecollectionoftopicsofferi
2、nga“one-stop-shopping”tosolvethemostcommondesignchallenges.Thusitshouldbeofinteresttopowerelectronicsengineersatalllevelsofexperience.Themostpopularcircuitsolutionsandtheirperformanceareanalyzed,includingtheeffectofparasiticcomponents,transientandextremeop
3、eratingconditions.ThediscussionbuildsfromsimpletomorecomplexproblemsstartingwithanoverviewofMOSFETtechnologyandswitchingoperation.Designprocedureforgroundreferencedandhighsidegatedrivecircuits,ACcoupledandtransformerisolatedsolutionsaredescribedingreatdeta
4、ils.AspecialchapterdealswiththegatedriverequirementsoftheMOSFETsinsynchronousrectifierapplications.Several,step-by-stepnumericaldesignexamplescomplementthepaper.INTRODUCTIONMOSFET–isanacronymforMetalOxidesourcingandsinkingsufficientcurrenttoprovideSemicond
5、uctorFieldEffectTransistoranditisforfastinsertionandextractionofthecontrollingthekeycomponentinhighfrequency,highcharge.Fromthispointofview,theMOSFETsefficiencyswitchingapplicationsacrossthehavetobedrivenjustas“hard”duringturn-onelectronicsindustry.Itmight
6、besurprising,butandturn-offasabipolartransistortoachieveFETtechnologywasinventedin1930,some20comparableswitchingspeeds.Theoretically,theyearsbeforethebipolartransistor.ThefirstswitchingspeedsofthebipolarandMOSFETsignallevelFETtransistorswerebuiltinthelated
7、evicesareclosetoidentical,determinedbythe1950’swhilepowerMOSFETshavebeentimerequiredforthechargecarrierstotravelavailablefromthemid70’s.Today,millionsofacrossthesemiconductorregion.TypicalvaluesMOSFETtransistorsareintegratedinmoderninpowerdevicesareapproxi
8、mately20to200electroniccomponents,frommicroprocessors,picosecondsdependingonthesizeofthedevice.through“discrete”powertransistors.ThepopularityandproliferationofMOSFETThefocusofthistopicisthegatedrivetechnolog
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