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1、AnalogBiCMOSDESIGNPracticesandPitfallsAnalogBiCMOSDESIGNPracticesandPitfallsJamesC.DalyDepartmentofElectricalandComputerEngineeringUniversityofRhodeIslandDenisP.GalipeauCherrySemiconductorCorp.CRCPressBocaRatonLondonNewYorkWashington,D.C.ForewordThisbookpresentspracticalmethodsandpitfallsencoun
2、teredinthedesignofbiCMOSintegratedcircuits.Itisintendedasareferencefordesignengineersandasatextforanintroductorycourseonanalogintegratedcircuitdesignforengineeringseniorsandgraduatestudents.Abroadrangeoftopicsarecoveredwiththeintentofgivingnewdesignersthetoolstocompleteadesignproject.Mostofthet
3、opicshavebeensimplifiedsotheycanbeunderstoodbystudentswhohavehadacourseinelectronics.ThematerialhasbeenusedinacourseopentoseniorsandgraduatestudentsattheUniversityofRhodeIsland.Inthecourse,studentswererequiredtodesignananalogintegratedcir-cuitthatwasfabricatedbyCherrySemiconductorCorporation.Int
4、heprocessofassemblingmaterialforthebook,wehaddis-cussionswithmanypeoplewhohavebeengenerouswithinforma-tion,ideasandcriticism.WearegratefultoJamesAlvernez,MarkBelch,BradBenson,MarkCrowther,VincenzoDiTommaso,JeffDumas,PaulFerrara,GodiFischer,JustinFisher,RobertFugere,BrianHarnedy,DavidHarrington,A
5、shishKirtania,Seok-BumKo,ShawnLaLiberte,AndreasLadas,SangmokLee,EricLind-berg,Jien-ChungLo,RobertMaigret,NadiaMatchey,AndrewMcKinnon,JayMoser,TedNeira,PeterRathfelder,ShelbyRay-mond,JonRhan,PaulSisson,MichaelTedeschi,ClaudioTuoz-zolo,andYingpingZheng.Finally,weoweourthankstothemanagementandengi
6、neeringstaffofCherrySemiconductorCorporation.CSChasfabricatedscoresofanalogICdesignsgeneratedbytheURIstudentsenrolledinthecoursethathasbeenthebasisforthisbook.JamesC.DalyDenisP.GalipeauContents1Devices1.1Introduction1.2SiliconConductivity1.2.1DriftCurrent1.2.2EnergyBands1.2.3SheetResistance1.2.4
7、DiffusionCurrent1.3PnJunctions1.3.1BreakdownVoltage1.3.2JunctionCapacitance1.3.3TheLawoftheJunction1.3.4DiffusionCapacitance1.4DiodeCurrent1.5BipolarTransistors1.5.1CollectorCurrent1.5.2BaseCurrent1.5.3Ebers-MollModel1.5.4Breakdown1
