8050三极管规格书.pdf

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1、JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDSOT-23Plastic-EncapsulateTransistorsSOT-23M8050TRANSISTOR(NPN)FEATURESPowerdissipation1.BASE2.EMITTERMARKING:Y113.COLLECTORMAXIMUMRATINGS(TA=25℃unlessotherwisenoted)SymbolParameterValueUnitsVCBOCollector-BaseVoltag

2、e40VVCEOCollector-EmitterVoltage25VVEBOEmitter-BaseVoltage6VICCollectorCurrent-Continuous0.8APCCollectorPowerDissipation0.2WTjJunctionTemperature150℃TstgStorageTemperature-55-150℃ELECTRICALCHARACTERISTICS(Tamb=25℃unlessotherwisespecified)ParameterSymbolTestco

3、nditionsMINMAXUNITCollector-basebreakdownvoltageV(BR)CBOIC=100μA,IE=040VCollector-emitterbreakdownvoltageV(BR)CEO*IC=1mA,IB=025VEmitter-basebreakdownvoltageV(BR)EBOIE=100μA,IC=06VCollectorcut-offcurrentICBOVCB=35V,IE=00.1μACollectorcut-offcurrentICEOVCE=20V,I

4、B=00.1μAhFE(1)VCE=1V,IC=5mA45DCcurrentgainhFE(2)VCE=1V,IC=100mA80300hFE（3）VCE=1V,IC=800mA40Collector-emittersaturationvoltageVCE(sat)IC=800mA,IB=80mA0.5VBase-emittersaturationvoltageVBE(sat)IC=800mA,IB=80mA1.2VTransitionfrequencyfTVCE=6V,IC=20mA,f=30MHz150MHz

5、*PulseTest:pulsewidth≤300µs,dutycycle≤2%.CLASSIFICATIONOFhFE(2)RankLHRange80-200200-300