灭弧室电场分析

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1、LowfrequencysimulationofaGasInsulatedSwitchgearCSTEMSTUDIO™(CSTEMS)canbeappliedtothesimulationofanABBCalorEmagSF6GasInsulatedSwitchgear(GlS)suchastheonedepictedinfigure1whichwasalsosimulatedin[1].Aprimarygoalofsuchasimulationistoobtainthecurrentdistrib

2、utionintheswitchgearconductorswithproximityandskindeptheffectstakenintoaccount.TheCSTEMSLowFrequencysolverisappropriateforthispurpose・ThegeometryisimportedfromPro/E®andconsistsofametallichousinginwhichathree-phaseconductorsystemissituated.Themetallicho

3、usingisconsideredasperfectlyconductingwhereastheinnerconductorshaveaelectricalconductivityof3.2e7S/m・50Hzthreephasecurrentsofmagnitude4000A,shiftedinphaseby120degrees,areinjectedvia3so-calledcurrentpaths,definedattheendsoftheconductorsonthesamesideofth

4、eGlS・Figure1:Gasinsulatedswitchgearwithhousing,conductorsandcurrentpathexcitationarrangementTheskindepthmustbetakenintoaccountwhenmeshingthemodelhencealargenumberofmeshcellsarerequired.Thismodel,solvedwiththeCSTEMSLowFrequency(magnetoquasistatic)tetrah

5、edralsolver,consistsof1.48milliontetrahedronscorrespondingto1.72millioncomplexunknownsandsimulatestoanaccuracyof1e-6injust8minutesonanIntel2GHzWoodcrestsystem.Figure2:TetrahedralmeshusedforthesimulationofthegasinsulatedswitchgearThegeneratedmeshandthec

6、urrentpathexcitationsforthesimulationareshowninfigure2.Theconductorshavebeenadequatelydiscretisedtoallowforthecorrectmodellingoftheskindepthbyspecifyingamaximummeshstepwidth・CSTZ.54e6乙32巳62.10e61.8?e6

7、1-65e61.43e61•Z6e69.78e5?・5佔5.31e53-0?e5j0」Figure3:

8、PhasevariationofcurrentdistributionintheconductorsFurtherpost-processingquantitiessuchastheelectricallossesandforcesontheconductorsmayalsobecalculated.ThisarticlehasdemonstratedsomeofthepowerfulcapabilitiesofCSTEMSforthesimulationofamediumvoltageswitch

9、gearcomporient,namely,thecomprehensiveCADImportfeaturesandthefastandefficientlowfrequencysolver・Referenee:[1]OliverStezAndreasHauser,GabrielWittum,"'AdaptiveLocalMultigridMethodsforSolvingTime・HarmonicEddCurrentProblems”,IEEETransaction