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1、晶体管基础知识(23)()Transistors:(semiconductordiscretedevices)Semiconductordiscretedevicesrefertosemiconductordiodes,three一stagetransistors,andsemiconductorspecialdevices・Characteristicparameter:(diode)If:heisdefinedaspositiveDCcurrentflowsthroughthediodelowresistancedirection,therectifi
2、erisdefinedastheprovisionsofthemaximumworkingcurrentconditionsofuseisrotatinghalfwaverectifiercircuitresistaneeloaddownloadallowscontinuousbytheaveragevalueofsiliconswitchisdefinedasratedpowerunderthemaximumallowedbythediodepositivepulsecurrent.Ifmforwardpeakcurrent:definedasthema
3、ximumforwardpulsecurrentallowedtopassthroughadiodeunderratedpower・Vfforwardvoltagedrop:heisdefinedastheaveragevalueofthevoltagedropwhenthediodepassestheratedcurrent・Maximumreverseoperatingvoltage:thesiliconrectifiertubeisthe2/3ofthebreakdownvoltageandthemaximumreversepeakvoltagead
4、dedtothesiliconstackasspecifiedinthenormalhalfwaveresistiveloadcircuit・Forgermaniumdetectortubes,siliconswitchingtubesarespecifiedasreversecurrent,resultinginvoltagebetweenpoles・Breakdownvoltage:forsoftbreakdownsuchasgermanium,switches,referstothevalueofthevoltageinthereversecurre
5、nttoagivenpole,fortherectifierswitchhardbreakdowntube,referstothepeakvoltagecharacteristiccurvesharplyreversepower・Characteristicparameter:(triode)HFEcommonemitterDCamplificationfactor:whenthecollectorvoltageandcurrentisthespecifiedvalue,theratioofIctolb.Fhfecommonemittercut-offfr
6、equency:definedasthefrequencyof0.707(i.e.,3dB)whenHFEdropstolkhz.F0characteristicfrequency:whenthefrequencyishighenough,HFEwilldecreaseataspeedof6dBperfrequency,andFTisdefinedasthefrequencyofhfe二1.Icboemitteropencircuit,collectorandbasevoltageasthespecifiedvalueofthecollectorcurre
7、nt・Iceobaseopencircuit,collectorandemittervoltageasthespecifiedvalueofthecollectorcurrent・MaximumallowablecurrentofICMcollector・MaximumallowabledissipationpowerofPCMcollector・VCBOemitteropencircuit,collector,basebreakdownvoltage・VCEObaseopencircuit,collector,EmitterBreakdownvoltag
8、e.VEBOopencollector,transmitter,b
