第九讲化学机械平坦化CMP

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1、《《半导体制造工艺及设备半导体制造工艺及设备》》《《SemiconductorManufacturingTechnologySemiconductorManufacturingTechnology》》第九讲化学机械平坦化CMPDr.Dr.潘开林潘开林机电与交通工程系机电与交通工程系桂桂林林电电子子科科技技大大学学1内容提要Æ基本概念Æ传统平坦化技术ÆCMP的技术需求与优势Æ原理Æ应用2表面起伏的单层IC3CMOS中的CMP4DefinitionofPlanarizationÆPlanarizati

2、onisaprocessthatremovesthesurfacetopologies,smoothesandflattensthesurfaceÆThedegreeofplanarizationindicatestheflatnessandthesmoothnessofthesurface5CMP相关术语6OtherPlanarizationMethodsÆThermalflowÆSputteringetchbackÆPhotoresistetchback,ÆSpin-onglass(SOG)e

3、tchback7ThermalFlowÆDielectricplanarizationÆPre-metaldielectricÆHightemperature,~1000°CÆPSGorBPSG,becomesoftandstarttoflowduetothesurfacetensionÆSmoothandlocalplanarization8AsDeposited9AfterThermalFlow10EtchBackÆReflowtemperatureistoohighforIMD?canmel

4、taluminumÆOtherplanarizationmethodisneededforIMDÆSputteringetchbackandreactiveetchback11EtchBackÆArgonsputteringetchbackchipoffdielectricatcornerofthegapandtapertheopeningsÆSubsequentCVDprocesseasilyfillsthegapwithareasonableplanarizedsurfaceÆReactive

5、ionetchbackprocesswithCF/O42chemistryfurtherplanarizesthesurface12CVDUSG13SputteringEtchBackofUSG14CVDUSG15ReactiveEtchBackofUSG16PhotoresistEtchbackÆPRspin-coatscanbakingÆPlanarizedsolidthinfilmonwafersurfaceÆPlasmaetchprocesswithCF/Ochemistry42ÆOxid

6、eetchedbyFandPRbyOÆAdjustingCF/Oflowratioallows1:1of42oxidetoPRselectivity.ÆOxidecouldbeplanarizedafteretchback17AfterOxideDeposited18PhotoresistCoatingandBaking19PhotoresistandOxideEtching20AfterEtchback21PhotoresistEtchbackÆWhenFetchoxide,Owillberel

7、easedÆHigherPRetchrateduetoextraoxygenÆPRetchbackcan’tplanarizeverywellÆAfterthePRetchback,dielectricfilmsurfaceisflatterthanitisjustdeposited.ÆInsomecases,morethanonePRetchbackisneededtoachieverequiredflatness22SOGEtchbackÆSOGreplacesPRÆAdvantage:som

8、eSOGcanstayonthewafersurfacetofillthenarrowgapsÆPECVDUSGlinerandcaplayerÆUSG/SOG/USGgapfillandsurfaceplanarizationÆSometimes,twoSOGcoat,cureandetchbackprocessesareused23SOGEtchback24NecessityofCMP25NecessityofCMPÆ0.25umpatternrequireroughness<