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1、第一部分半导体器件第一章pn结二极管第二章异质结二极管(量子阱、超晶格)第三章金属-半导体肖特基二极管(包括欧姆接触和肖特基接触)郑新和1第三章金属-半导体肖特基二极管(包括欧姆接触和肖特基接触)3.1金属-半导体二极管历史3.2肖特基势垒二极管3.3金属-半导体的欧姆接触23.1金属-半导体二极管(整流)历史实际上最早具有应用的二极管是金属和半导体的点接触二极管(1900年前后,理论发现在1874年),又称猫须(cat’swhisker)或晶体二极管(crystaldiode)探测器,由很细的钨丝和方铅矿P
2、bS组成,用作radiodetector(右图)。In1874,GermanscientistKarlFerdinandTheNobelPrizeinPhysics1909Braundiscoveredtheelectricalresistanceofvariousnaturalandsyntheticmetalsulfidesampleswasdependentondirection.CRTin1897,andcoupledresonantcircuitsinwirelesstransmittersin1
3、898.In1899,JagadisChandraBose,professorGuglielmoMarconiKarlFerdinandBraunofphysicsinIndia,usedgalena(PbS)(1874-1937)(1850-1918)crystals-metalwiretodetectmillimeterTheNobelPrizeinPhysics1909wasawardedjointlytoGuglielmoMarconiandwavesandpatentedit2yearslater
4、.Bose’sKarlFerdinandBraun"inrecognitionoftheircontributionstothedevelopmentofwirelesstelegraphy"detectorandMarconi’scircuitwasusedinMarconi’sfirsttransatlanticradiotransmissionin1901.3In1906,G.W.Pickard(American,1877-1956)receivedapatentonapracticalpoint-c
5、ontactrectifierusingSi.In1907,GeorgeW.PiercepublishedapaperinPhysicalReviewshowingrectificationpropertiesofdiodesmadebysputteringmanymetalsonvarioussemiconductors(CuO/Cu,Se/Metal,Si/W,2见右图)withapoint-contact.In1926,theuseofthemetal–semiconductordioderecti
6、fierwasproposedbyLilienfeldinthefirstofhisthree-terminaltransistorpatentsasthegateofthemetal–semiconductorfieldeffecttransistors.In1939,thecorrecttheoryofthefield-effecttransistorusingametal/semiconductorgatewasadvancedbyWilliamShockley.4In1939,thefirstth
7、eorythatpredictedthecorrectdirectionofrectificationofthemetal–semiconductorjunctionwasgivenbyNevillMott.HealsofoundthesolutionforcurrentsformulaastheMottbarrier(since1948).WalterH.Schottky(1886–1976,Germanphysicist)andSpenkeextendedMott'stheorybyintroducin
8、galinearlydecayingelectricfieldastheSchottkybarrier(diffusionmodel).Asimilartheory(Schottky-Davydovextension)wasalsoproposedbyDavydovin1939.In1942,thecorrecttheorywasdevelopedbyHans.InBethe'stheory,th