北工大微电子工艺复习提纲

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1、1.Si2.3.Sip-Bn-PAsSb4.BA5.SiP12005.01021/cm36.SiB11502.41020/cm37.8.2013-10-2411.BJT-2.//3.SiCl44.5.6.7.8.(MBE)9.MOCVDMetalOrganicCVD2013-10-242()2013-10-243()1.2.APCVDLPCVDPECVD3.CVDGrove4.SiO2USGPSGBPSG5.SiO2CVDSiO26.CVDSiO2CVDSiO27.Si3N48.polyMOSBJT2

2、013-10-244()1.2.3.2013-10-245()1.2.Ea3.BPAs4.erfc5.Gaussian6.7.2013-10-246()8.9.Ttx2Dterfc1CBADtCsjxj2DtlnADtCsCB10.11.BJT2013-10-247()1.RXpRpRp2.Dose(Energy)(tiltangle)4.LDD5.6.2013-10-248()7.8.2013-10-249()2.5.6.7.8.9.VSiO22013-10-2410()SiliconDielect

3、ricPhotoresistDepositPatternMetaldielectricandphotoresistandphotoresistetchdielectricDepositmetalLiftoffmetalandphotoresist2013-10-2411()1.2.Silicide-Polycide-Salicide-3.BPSG/PSGSOGspin-onglass)4.CMP5.6.Cucopper7.8.kk9.Wplug2013-10-2412()10.?CVD??CVDSiO

4、2TEOSPECVDSiO2PECVDSOGHDP-CVDSiO2k(1);(2);(3)(4)(5)(6)(7)(8)(9)500(10)(11)(12)(13)(14)(15)16(17)CVD124002013-10-2413()11.IC?1)//-2)O3-CVD3)CVD1)//SiO2“V”2)3)CVD2013-10-2414()12.ICAL1aECMP()CuCuCuCuECMPCMPECMPbECPcCESiWetEtching2013-10-2415()13.ICCVD1CVD

5、CVDTiNTiWTiN2350~400AlCu2013-10-2416