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1、2012InternationalConferenceonOptoelectronicsandMicroelectronics(ICOM)FabricationandTestingof980nmHigh-PowerVCSELwithAlNFilmPassivationLayer1*1LifengHou,YongfengMa1.DepartmentofElectronicEngineering,ChangchunYuanFeng2,engineeringTechniqueInstituteChangch
2、un,China,email:houlifeng5988@.163.com2.NationalKeyLaboratoryonHighPowerSemiconductorLasers,ChangchunUniversityofScienceandTechnologyAbstract—WereportthefabricationandthetestingofanovelTheheatconductivityoftheAlNfilmis300W/mK,high-powerVCSELwithAlNfilmpa
3、ssivationlayerinthisapproachestheCu,andishigher500timesthantheSiO2film,paper.Theanalysisonthehigh-powerVCSELshowthatthesotheAlNfilmisthebestmaterialforthepassivationlayerofAlNfilmpassivationlayercanimprovetheopto-electrichigh-powerVCSEL.Theanalysisshowt
4、hattheAlNfilmcharacteristicsofhigh-powerVCSEL,reducethethermalpassivationlayercanimprovethetemperaturedistributionresistanceofVCSELandenhancetheabilityoftheheatinsidehigh-powerVCSEL,reducethethermalresistanceofdissipation;TheAlNfilmpassivationlayerandth
5、eSiO2filmVCSEL;Moreovertheprocessesofthehigh-powerVCSELpassivationlayerhigh-powerVCSELbothwiththesamewithAlNfilmpassivationlayerissimplerthantheprocessesaperturehavebeenmadebythesameprocessesonthesameofdevicewithSiO2filmpassivationlayer.epitaxialwafer;t
6、hetwokindsofhighpowerVCSELhavebeentestedcomparatively,thetestingresultsshowthattheoutpowerⅡ.DEVICESTRUCTUREoftheVCSELonAlNfilmpassivationlayeris470mWatroomtemperature,itscharacteristictemperatureis120K,ithavetheThe980nmhigh-powerVCSELstructurewedesigned
7、ismuchbettertemperatureandopto-electriccharacteristicsthanwidelyusedinchinaandabroad[4],thatisemittingfromNthedeviceontheSiO2filmpassivationlayer.side,anditsheatsinkisonPside.Sketchesofhigh-powerVCSELstructureareshowninfigure1.Keywords—high-power;semico
8、nductorlaser;VCSEL;AIN;passivationlayerⅠ.INTRODUCTIONInrecentyears,alongwiththeapplicationsofthehigh-powersemiconductorlasersinmedicine,materialtreatment,freespacecommunicationandlaserpumping,thefabricationofthehigh-powerVCSELhas
