高灵敏度InAsAlSb量子阱的霍尔器件(英文)

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1、高灵敏度InAs/AlSb量子阱的霍尔器件(英文)武利翻苗瑞霞李永峰杨小峰西安邮电大学电子工程学院摘要：用分子束外延在GaAs(001)衬底上生长了两个量子阱结构的霍尔器件，一个是没有掺杂的量子阱结构，一个是Si-6掺杂的量子阱结构。研究了霍尔器件的面电子浓度和电子迁移率与温度的关系。结果表明，在300K下，Si-5掺杂的量子阱结构的电子迁移率高达25000cm2•V1•护，并且该器件输入电阻和输出电阻较低。同时，Si-5掺杂的量子阱结构霍尔器件的敏感度好于没有掺杂的量子阱结构霍尔器件。关键词：霍尔器件;量子阱;&掺杂;分子束外延;作者简介：武利翻(1980-)

2、，女，山西忻州人，博士研究生，讲师，2006年于重庆邮电大学获得硕士学位，主要从事III-V族HEMT、传感器等半导体器件的研究。E-mail:wulf0608@163.com收稿日期:2017-05-05基金：国家自然科学基金青年基金(51302215)HighSensitivityHallDeviceswithAlSb/InAsQuantumWellStructureWULi-fanMIAORui-xiaLIYong-fengYANGXiao-fengSchoolofElectronicEngineering,Xi'anUniversityofPostsan

3、dTelecommunications;Abstract：AnunintentionallydopedAlSb/InAsquantumwell(QW)structureandaSi-5dopedquantumwellstructureonGaAs(001)substratesweregrownbymolecularbeamepitaxy(MBE).Thedependenceofsheetelectrondensityandelectronmobilityonthemeasurementtemperaturewereinvestigated.Itisfoundth

4、a.telectronmobilityashighas25000cm2•V1•s1hasbeenachievedfor300KintheSi-5dopedquantumwellstrueture.TheHalldeviceswithhighsensitivityandgoodtemperaturestabilitywerefabricatedbasedontheSi~5dopedAlSb/TnAsquantumwel1structures.TheirsensitivityismarkedlysuperiortoHalldevicesofanunintention

5、allydopedAlSb/lnAsquantumwell.Keyword：Hal1device;quantumwel1;§-doping;molecularbeamepitaxy;Received：2017-05-051IntroductionTheHalldevicesworkontheprincipleoftheclassicalHalleffects.TheyhavebeenwidelystudiedfortheapplicationsinmagneticsensorsafterthefirsgenerationofHal1magneticsensors

6、wasfabricatedinthemid-1950s[1-2]•Thesensorshavebeendevelopingquicklyalongwiththe•Inaddition,Sb(AE=1.35eotherInAsmaterial•V•sat300K)andhighelectronprogressofmaterialgrowthtechnology,suchasmolecularbeamepitaxy(MBE)andmetal-organicchemicalvapordeposition(M0CVD)alargeconductionbanddiscon

7、tinuitybetweenInAsandAlV)providesthedeepestquantumwe11savailableforanylattice-matchedlll-Vheterostrueture[3],byvirtueofthehighelectronmobility(30000cmvelocity(4X10cm•s)[4],However,therearestillmanychallengestoobtainhighsensitivityHalldevices.Ontheonehand,bythelackofzineblendeinsulati

8、ngsubstrates