三菱IPM应用手册

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1、Apr.12,2006COMPANYPROPRIETARYNOTTOBEREPRODUCEDORDISCLOSEDWITHOUTSPECIFICWRITTENPERMISSIONOFMITSUBISHIELECTRICCORPORATIONMITSUBISHIDIPMITSUBISHIDIP--IPMIPMAPPLICATIONGUIDANCEAPPLICATIONGUIDANCEMitsubishiElectricCorporationPowerDeviceWorksP.D-070328-021WhatisinaDIPWhatisinaDIP--IPMIPM

2、??•IGBTandFWDiDIP-IPM–3φIGBTbridgeHVIC(6IGBTs&6FWDi)LevelShiftGateDriveUVProt.3ACMotorLine•LVICCPULVICGateDrive–GateDriveUVProt.OvercurrentProt.RSHUNT–UndervoltageLockout15V–OvercurrentProtection•HVIC–GateDrive–UndervoltageLockout–LevelShiftP.D-070328-022AboutPCBDesignAboutPCBDesign

3、C1:Tighttolerancetemp-compensatedelectrolytictypeC2,C3:0.22μ∼2μFR-categoryceramiccapacitorfornoisefiltering.(Note:ThecapacitancevaluedependsonthePWMcontrolusedintheappliedsystem.)C2VUFBDIP-IPMVUFSPC1HVIC1VP1VCCVBPCBDesignMainAttentions:(1)C3UPINHOU(1)InputwiringasshortaspossibleCOMV

4、SC2(2)ControlGNDwiringasshortaspossibleVVFBVVFSC1(3)PowerGNDwiringasshortandwideasHVIC2VP1VCCVBpossibleC3VPINHO(4)AllcapacitorslocatedcloselytoV(4)COMVSMDIP-IPMterminals;C2VWFBVWFS(5)RecommendedtoinsertaZenerdiodeC1HVIC3VP1betweeneachpairofcontrolsupply(5)VCCVBC3WPterminalstoprevent

5、surgedestruction.INHOWVPCCOMVS(6)PowerGNDandControlGNDshouldbeMCULVICconnectedatonlyapointN1.UOUT(Don’toverlapthesetwoGNDlines.)VN1VCC5VlineC3(4)VOUTUNUNIfthiswiringistoolong,VNVNshortcircuitmightbecaused.(5)WNWNWOUTFoFoVNONCINVNCGNDCFOCFOCIN(3)C4(CFO)15VlineR1C5Shuntresistor(2)N1(3

6、)ThelongwiringofGNDmightgenerateIfthiswiringistoolong,theSClevel(6)noiseoninputandcausemalfunction.fluctuationmightbelargerandcauseExampleofLargeDIPVer3SCmalfunction.P.D-070328-023Ver.3InputCircuit¢A2.5kΩpull-downresistorisbuiltDIP-IPMineachinputterminal,noneedofUP､VP､WP1kΩexternalr

7、esistor.LevelshiftGatecircuitDriver2.5ｋΩ(min.)¢IfRCnoisefilterisaddedtoinputMCUline,sincevoltagedropgeneratedonUN､VN､WN1kΩGatefilterresistor,pleasemakesurethatDrivertheDIP-IPMinputlevelsatisfyingthe2.5ｋΩ(min.)specifiedthresholdvoltage.¢Inputsignalwiringshouldbeasshortaspossible(2～3c

8、m)andnottoothin.Inp