各种半导体LED湿法清洗机

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1、各种半导体LED湿法清洗机苏州晶洲装备科技施利君DFPEBatchtype:ConventionaltypeCassettetypeCassettelesstypeSinglebathtypeSinglewafertype:ScrubberSEZWetbenchtypeWetbenchbathconfigurationSC1DIHFDISC2DIDIDRYPreFurnaceCleanSC1:StandardClean1SC2:StandardClean2HF:HydrofluoricAcidDI:De

2、IonizedWaterLotFlowTypicalWetCleanBathPHeatExchangerfilterpumpProcessbathMeasurementtankParticlepatterndefectMetalcontaminationJunctionleakOrganiccontaminationgateoxideleakNativeoxidegateoxideleakMicroRoughnesssgateoxideleakThecontaminationandItsinfluenc

3、e(沾污及其影响）SC:standardclean,RCA:Acompanyname,DIW:deionizedwaterSC-1(RCA1/APM:NH4OH:H2O2:DIW),SC-2(RCA2/HPM:HCl:H2O2:DIW),CARO(SPM/Piranha:H2SO4:H2O2)H3PO4(H3PO4:DIW)BOE(BufferoxideetchHF:NH4F)withsurfactant（表面活性剂）DHF(DiluteHF)DrySystem(SpinDry/IPAVaporDry/

4、MarangoniDry)KeywordSC1(MS)lightorganic&particleremoveDHFRemovechemicaloxideornativeOXSC2RemovalofmetalsimpuritiesBOE:RemoveoxidewithPRHF/HNO3Removepolyfilm.SPM(H2SO4:H2O2)PhotoresistandmetalsionsH3PO4Nitrideremove49%HFremovenitrideandthickoxideChemicala

5、pplicationSC1TypicalRatio:NH4OH:H2O2:DI=1:1:5-1:2:50Temp:40–80CMechanism:Solutionoxidizesurfaceorganicsanddissolvessolublecomplexesformed.PHishighLowstabilityofmetalimpuritiesNH4OHDissolvesSiO2andetchesSiH2O2Oxidizer,formslayerofchemicaloxideDepositi

6、onofsomespeciesofmetalsonoxide(e.g.Fe,Ca)RelationshipofZetaPotentialsandpHValueSC2Typicalratio:Hcl:H2O2:DI=1:1:5–1:1:50Temp:Typical80cPurpose:RemovemetallicimpuritiesfromwafersMechanism（机制）:LowPHimprovessolubilityofmetallicimpurities（低的PH值可以提高金属杂质的溶解度）Me

7、tallicchloridesformed(MetalslikeFe,Cacanberemoved)（形成金属氯化物）H2O2formschemicaloxide(AffectOxidequality)HFRatio:100:1-10:1Temp:Typical23–25CPurpose:SilicondioxideremovalNitrideremoval(Rare)38%HFSiO2+6HFSiF6+2H2O+H2Hydrophobic（疏水）surfaceproduced(Particles

8、ensitive)SPM(Caro)MainReactiveCompound:H2S2O5Caro’sacidTypicalTemp:130CChemicalRatio:H2SO4:H2O2=4:1-6:1AfterdryashingandIMPpostclean,Photoresistremoveandlightorganicremoveforpre-cleanSi3N4+H2O3SiO2+4NH3H3PO4为催化剂，H2O为主要反应物T