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1、Tensile-strained,n-typeGeasagainmediumformonolithiclaserintegrationonSi1*1111JifengLiu,XiaochenSun,DongPan,XiaoxinWang,LionelC.Kimerling,Thomas21*L.Koch,andJurgenMichel1DepartmentofMaterialsScienceandEngineering,MassachusettsInstituteofTechnology,Cambridge,MA021392CenterforOptica
2、lTechnologies,LehighUniversity,BethlehemPA18015*Correspondingauthors:jfliu01@mit.edu,jmichel@mit.eduAbstract:Weanalyzetheopticalgainoftensile-strained,n-typeGematerialforSi-compatiblelaserapplications.ThebandstructureofunstrainedGeexhibitsindirectconductionbandvalleys(L)lowerthan
3、thedirectvalley(Γ)by136meV.Adequatestrainandn-typedopingengineeringcaneffectivelyprovidepopulationinversioninthedirectbandgapofGe.ThetensilestraindecreasesthedifferencebetweentheLvalleysandtheΓvalley,whiletheextrinsicelectronsfromn-typedopingfilltheLvalleystotheleveloftheΓvalleyt
4、ocompensatefortheremainingenergydifference.Ourmodelingshowsthatwithacombinationof0.25%193tensilestrainandanextrinsicelectrondensityof7.6×10/cmbyn-type-1doping,anetmaterialgainof~400cmcanbeobtainedfromthedirectgaptransitionofGedespiteofthefreecarrierabsorptionloss.Thethreshold-2cu
5、rrentdensityforlasingisestimatedtobe~6kAcmforatypicaledge-emittingdoubleheterojunctionstructure.Theseresultsindicatethattensilestrainedn-typeGeisagoodcandidateforSiintegratedlasers.©2007OpticalSocietyofAmericaOCIScodes:(140.3380)Lasermaterials;(130.3120)IntegratedopticsdevicesRef
6、erencesandlinks1.D.J.Eaglesham,J.Michel,E.A.Fitzgerald,D.C.Jacobson,J.M.Poate,J.L.Benton,A.Polman,Y.-H.Xie,andL.C.Kimerling,“Microstructureoferbium-implantedSi,”Appl.Phys.Lett.58,2797(1991).2.N.KoshidaandH.Koyama,“Visibleelectroluminescencefromporoussilicon,”Appl.Phys.Lett.60,347
7、-349(1992).3.L.Pavesi.L.DalNegro,C.Mazzoleni,G.Franzo,andF.Priolo,“Opticalgaininsiliconnanocrystals,”Nature408,440-444(2000).4.B.Zheng,J.Michel,F.Y.G.Ren,L.C.Kimerling,D.C.JacobsonandJ.M.Poate,“Room-temperaturesharplineelectroluminescenceatλ=1.54µmfromanerbium-doped,siliconlight-
8、emittingdiode,”Appl.Phys.Lett.64,2842-28
