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1、ARTICLEINPRESSJournalofCrystalGrowth293(2006)509–516www.elsevier.com/locate/jcrysgroMeniscusdynamicsandmeltsolidificationintheEFGsilicontubegrowthprocessaa,bbbB.Yang,L.L.Zheng,B.Mackintosh,D.Yates,J.KalejsaDepartmentofMechanicalEngineering,StonyBrookUniversity,St
2、onyBrook,NY11794,USAbRWESchottSolar,Inc.,Billerica,MA01821,USAReceived4October2005;receivedinrevisedform17April2006;accepted18May2006CommunicatedbyJ.J.DerbyAbstractThispaperpresentstheoreticalandnumericalstudyofmeniscusdynamicsundersymmetricandasymmetricconfigurat
3、ions.Ameniscusdynamicsmodelisdevelopedtoconsidermeniscusshapeanditsdynamics,heatandmasstransferaroundthedie-topandmeniscus,interactionofsolidificationwithmeniscusandtubethicknessvariation.Theparametricstudiesareconductedtorevealthecorrelationsamongtubethickness,ef
4、fectivemeltheight,pullrate,die-toptemperatureandcrystalenvironmentaltemperature.r2006ElsevierB.V.Allrightsreserved.Keywords:A1.Meniscusstabilityanddynamics;A2.Edgedefinedfilmfedgrowth1.Introductionprocessesareinvolvedsuchasmeniscusformationanddevelopment,movementof
5、solidificationinterface,andDemandforsingleorpoly-siliconhasbeenincreasedinteractionatthecrystal–liquid–vaportri-junction.Thedramaticallyduetorapidexpansionofphotovoltaicprocessisprimarilydependentofthemeniscusthatisindustry.Variousgrowthtechniqueswereusedforprodu-
6、formedbetweenthedieandseed.Duringyears,anumbercingsiliconwaferforPVcellsuchasCzochralski,floatingofEFGgrowthmodelshavebeendevelopedtoidentifythezone,casting,ribbonandedged-definedfilm-fedgrowthoperatingconditionsunderwhichastableribbongrowthis(EFG)methods.Amongthese
7、,theEFGmethodisthefirstfeasible[2–5].Thecriticalconditionsfordiegeometry,pullnon-conventionaltechniqueforcrystallinesiliconwaferrateandthermalenvironmentwereidentifiedbasedontheproductiontoenterintolargescalemanufacturinginthelinearperturbationanalysisunderthestead
8、ystatecondi-photovoltaicindustry.Conventionalcrystalgrowthmeth-tion[6–7].ThetimedependentEFGgrowthmodelwasodsforsiliconingotsaretheCzochralskiorcastinglaterdev