低压双极霍尔MH258

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1、MH258SpecificationMicropowerHallEffectSwitchMH258Hall-effectsensorisatemperaturestable,stress-resistant,micro-powerswitch.Superiorhigh-temperatureperformanceismadepossiblethroughadynamicoffsetcancellationthatutilizeschopper-stabilization.Thismethodreducestheoffsetvoltagenormallycausedbydevi

2、ceovermolding,temperaturedependencies,andthermalstress.MH258includesthefollowingonasinglesiliconchip:voltageregulator,Hallvoltagegenerator,small-signalamplifier,chopperstabilization,Schmitttrigger,open-drainoutput.AdvancedCMOSwaferfabricationprocessingisusedtotakeadvantageoflow-voltagerequi

3、rements,componentmatching,verylowinput-offseterrors,andsmallcomponentgeometries.Thisdevicerequiresthepresenceofomni-polarmagneticfieldsforoperation.MH258isratedforoperationbetweentheambienttemperatures–40℃and+85℃fortheEtemperaturerange.Thefourpackagestylesavailableprovidemagneticallyoptimiz

4、edsolutionsformostapplications.PackagetypesSOisanSOT-23(1.1mmnominalheight),SPisanPSOT-23(1.1mmnominalheight),STisanTSOT-23(0.7mmnominalheight),aminiaturelow-profilesurface-mountpackage,whilepackageUAisathree-leadultra-miniSIPforthrough-holemounting.ThepackagetypeisinaleadHalogenFreeversion

5、wasverifiedbythirdpartyLab.FeaturesandBenefitsCMOSHallICTechnologyStrongRFnoiseprotection1.70to5.5Vforbattery-poweredapplicationsOmnipolar,outputswitcheswithabsolutevalueofNorthorSouthpolefrommagnetOperationdownto1.70V,MicropowerconsumptionHighSensitivityforreedswitchreplacementapplic

6、ationsMultiSmallSizeoptionLowsensitivitydriftincrossingofTemprangeUltraLowpowerconsumptionat5uA(Avg)HighESDProtection,HBM>±4KV(min)OpenDrainoutputApplicationsSolidstateswitchHandheldWirelessHandsetAwakeSwitch(FlipCell/PHSPhone/NoteBook/FlipVideoSet)Lidclosesensorforbatterypowereddev

7、icesMagnetproximitysensorforreedswitchreplacementinlowdutycycleapplicationsWaterMeterFloatingMeterPDVDNB072216Page1of6Rev.1.00MH258SpecificationMicropowerHallEffectSwitchOrderingInformationCompanyNameandProductCategoryXXXXXXXXX-XMH:MSTHallEffect/MP: