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1、NanoStructuredMaterials,Vol.11,No.8,pp.1239±1243,1999ElsevierScienceLtdPergamonCopyright©2000ActaMetallurgicaInc.PrintedintheUSA.Allrightsreserved.0965-9773/99/$±seefrontmatterPIIS0965-9773(99)00414-6VISIBLEPHOTOLUMINESCENCEINIONBEAMMIXEDSiO2/Si/SiO2LAYERS1111223K.H.Chae,J.H.Son,G.S.Ch
2、ang,H.B.Kim,J.Y.Jeong,S.Im,J.H.Song,441K.J.Kim,H.K.KimandC.N.Whang*1Atomic-ScaleSurfaceScienceResearchCenterandDepartmentofPhysics,YonseiUniversity,Seoul120-749,Korea2DepartmentofMetallurgicalEngineering,YonseiUniversity,Seoul120-749,Korea3AdvancedAnalysisCenter,KoreaInstituteofScience
3、andTechnology,Seoul130-650,Korea4SurfaceAnalysisGroup,KoreaResearchInstituteofStandardsandScience,Taejon305-600,Korea(ReceivedSeptember3,1999)(AcceptedNovember5,1999)AbstractÐVisiblephotoluminescencefromsiliconnanocrystalsembeddedinSiO2matrixbyionbeammixingwasinvestigated.Photoluminesc
4、encespectraofionbeammixedSiO2/Si/SiO2filmsexcitedbyanAr-laser(457.9nm)showedmoreintenseluminescencewithapeakcenteredat720nmthanthatpreparedbytheconventionalionimplantationmethod.TheformationofnanocrystalsinSiO2matrixwasconfirmedbycross-sectionalhighresolutiontransmissionelectronmicrosc
5、opy.Theredluminescenceisattributedtothesiliconnanocrystalsproducedbyionbeammixing.©2000ActaMetallurgicaInc.1.IntroductionPhotoluminescence(PL)fromsiliconnanocrystalsembeddedinSiO2hasbeenunderactiveinvestiga-tionduetoitspotentialapplicationinSi-basedoptoelectronicdevices.Accordingtotheq
6、uantumconfinementmodel,PLissensitivetothenanocrystalshapeandsizedistribution[1].Amongvarioustechniquessuchasselective-sizeprecipitation[2],sparkerosion[3],ionimplantation[4,5],andchemicalvapordeposition[6]toproduceSinanocrystals,ionimplantationtechniquehasbeenusedbymanyresearchersforst
7、udyingPLinsiliconnanocrystals,becauseitisaversatiletechniquewheremanyparameterscanbeeasilymodifiedandcontrolled.However,highconcentrationofSinanocrystalsishardlyachievedbyionimplantationduetoitssputteringeffect.Thesputteredatomsaretypicallybalancedwiththeincidentonesabout10atomic%ofd
