高压IGBT模块 (HVIGBT)

《高压IGBT模块 (HVIGBT)》由会员上传分享，免费在线阅读，更多相关内容在教育资源-天天文库。

1、高压IGBT模块(HVIGBT)性能特点H系列：采用平板型IGBT硅片，其可靠性已得到业界公认N系列：采用CSTBTTM硅片，进一步降低损耗，缩小体积N系列B型：采用CSTBTTM硅片，封装与H系列兼容续流二极管：软恢复特性，保证良好的EMI性能基板：有Cu和AlSiC两种额定电压：从1700V到6500V额定电流：从200A到2400A绝缘电压：从4.0kVrms到10.2kVrms应用领域牵引和大功率变频传动电力传输DC斩波器装置HVIGBTModulesVCES(V)产品代数(基板材料)电路拓扑Ic(A)200400600800900

2、1000120015001600180024001700G1(Cu)1单元CM800HA-34H(60KB) CM1200HA-34H(48KB) 2CM600DY-34H5单元(49KB)斩波单元CM600E2Y-34H(49KB)G3(AlSiC)1单元 CM1200HC-34H(63KB) CM1600HC-34H(63KB)CM1800HC-34H(65KB)CM2400HC-34H(65KB)2单元CM800DZ-34H(61KB)G4(Cu)2单元CM800DZB-34N(91KB) CM1200DB-34N(59KB) G4(

3、AlSiC)1单元 CM1200HCB-34N(94KB) CM1800HC-34N(57KB)CM2400HC-34N(58KB)CM1800HCB-34N(92KB)CM2400HCB-34N(95KB)2单元 CM1200DC-34N(59KB) 5斩波单元 CM1200E4C-34N(58KB) 2500G1(Cu)1单元CM800HA-50H CM1200HA-50H(45KB) 2单元CM400DY-50H(47KB)G2(Cu)1单元CM800HB-50H(47KB) CM1200HB-50H(51KB) G3(AlSiC)1

4、单元 CM1200HC-50H(68KB) 3300G1(Cu)1单元CM800HA-66H(43KB) CM1200HA-66H(45KB) 2单元CM400DY-66H(45KB)CM805斩波单元0E2Z-66H(51KB)G2(Cu)1单元CM800HB-66H(47KB) CM1200HB-66H(51KB) G3(AlSiC)1单元CM800HC-66H(65KB) CM1200HC-66H(68KB) 斩波单元CM800E2C-66H(51KB)CM800E4C-66HCM800E6C-66H(67KB)G4(AlSiC)1单

5、元CM400HG-66H(60KB)CM800HG-66HCM1000E4C-66R(110KB)CM1200HG-66H(65KB)CM1500HC-66R(111KB)4500G2(Cu)1单元CM400HB-90H(58KB)CM600HB-90H(60KB)CM900HB-90H(64KB)5G3(AlSiC)1单元CM900HC-90H(86KB)G4(AlSiC)1单元CM600HG-90HCM900HG-90H6500G4(AlSiC)1单元CM200HG-130H(100KB)CM400HG-130HCM600HG-130H

6、(106KB)斩波单元CM400E2G-130HCM400E4G-130H5