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1、23rdEuropeanPhotovoltaicSolarEnergyConference,1-5September2008,Valencia,SpainNOVELSELECTIVEEMITTERSOLARCELLBASEDONn-TYPEmc-Si11111MarioTucci,LucaSerenelli,AlbertoDelBono,MassimoIzzi,LuisaPirozzi,22PierinoMartufi,AnnunziataSanseverino,3LucillaBittoni1ENEAResearchCenterCasacc
2、iaViaAnguillarese,301,00123RomaItalye-mail:mario.tucci@casaccia.enea.itTel:+390630484095Fax:+3906304864052DAEIMIUniversityofCassinoViaDiBiasio43,03043Cassino(FR)Italy3CHIMETS.p.A,viadiPescaiola74,52040Viciomaggio,Arezzo,ItalyABSTRACT:Toachievehigherefficiencyinsiliconbaseds
3、olarcellselectiveemitterformationcanbehelpfultoenhancetheshortwavelengthresponse.Inturntheindustrialapplicationofthistechnologyisstilllimitedbytherealignmentproblemsofthefrontmetalcontactwithrespecttothehighdopedregionoftheemitterlayer.Inthispreliminaryworkweproposeaselfali
4、gnmentthoughtbasedonaninnovativeprocedureabletofabricatehigh-lowdopingprofileoftheemitterregion.Theideaisbasedonaplasmatreatmentabletotrimdownthethicknessofanhomogeneousheavydopedemitterreducingitsdopingconcentrationanditssheetresistance.Inparticularthefrontmetalgridscreenp
5、rintedontheheavydopedemitterhasbeenusedasamaskduringthedryplasmaprocedure.Onlytheemitterregionsoffgridhavebeenetchedawaytoachievethelowdopingprofileusefultoobtainaneffectiveselectiveemitter.Keywords;selectiveemitter,dryetching,borondiffusion,plasma.1.INTRODUCTIONAstheemitte
6、rthicknessisreducedastheemittersheetresistanceisincreased.ThenthelowdopedemitterInrecentyearsseveralprocesseshavebeenregionispassivatedbyamorphoussilicon/siliconnitrideinvestigatedtoincreasethesunspectrumcollectionas(a-Si:H/SiNx)layer[8].Thehighdopedregionunderthewellasthee
7、fficiencyofsiliconbasedsolarcell.Onemetalcontactcanreducethecontactresistance.promisingapproachistheselectiveemitterformationontopofthecell.Thisideaisbasedondifferentialdopeofthesolarcellfrontemitterallowinghigherdopedregion2.SAMLPESPREPARATIONundermetalgridcontacttoreduces
8、eriesresistance,andlowerdopedregionoffgridtopromoteabettersurface2Inthiswork2-3Ωcm
