Transmission of Signals With Complex Constellations Using Millimeter-Wave Spatially Power-Combined CMOS Power Amplifiers and Digital Predistortion

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1、Thisarticlehasbeenacceptedforinclusioninafutureissueofthisjournal.Contentisfinalaspresented,withtheexceptionofpagination.IEEETRANSACTIONSONMICROWAVETHEORYANDTECHNIQUES1TransmissionofSignalsWithComplexConstellationsUsingMillimeter-WaveSpatiallyPower-CombinedCMOSPowerAmplifiersandDigitalPredistortio

2、nHayg-TanielDabag,BasselHanafi,OzanD.Gürbüz,StudentMember,IEEE,GabrielM.Rebeiz,Fellow,IEEE,JamesF.Buckwalter,Member,IEEE,andPeterM.Asbeck,Fellow,IEEEAbstract—Thispaperreportsthegeneration,amplification,beoperatedclosertocompression.Unfortunately,lowercom-andradiationofmodulatedsignalsat45GHzusingas

3、ingle-chipplexitysignalssuchas16-QAM,quadraturephase-shiftkeyingCMOSpoweramplifiercoupledtoa22antennaarray.Using(QPSK),andbinaryphase-shiftkeying(BPSK)alsohavelowerdigitalpredistortion,complexconstellationsweredemonstratedspectralefficiencyandinherentlyrequiretheuseoflargeband-forwidemodulationband

4、width,whichallowshighdataratestobetransmittedinaspectrallyefficientmanner.Afterpredistortion,widthsforhighdata-ratecommunication.Thiswouldlimitthea98-MS/s1024-QAMsignalwithpeak-to-averagepowerrationumberofusersinagivenband.Otherresearchersfocusedonof7dBwasdemodulatedwithanerrorvectormagnitudeofhig

5、hercomplexitymodulationschemessuchas64-QAM,256-1.3%.ThemeasuredequivalentisotropicallyradiatedpowerwasQAM,or1024-QAMinthemm-waveregimetoachievehigher26.2dBm.ThecorrespondingaverageRFpowerproducedbythespectralefficiency[2],[3].However,theachievedoutputpowerCMOSchip,consideringasimulatedantennagaino

6、f12dB,was14.2dBm.levelsarerelativelylow.Inordertoincreaseoutputpowers,thestacked-FETPAarchitecturehasbeenstudiedandrelativelyIndexTerms—CMOS,digitalpredistortion(DPD),fifthgener-ation(5G),millimeter-wave(mm-wave)integratedcircuits(ICs),highoutputpowerlevelshavebeenreported[4]–[6].Thiswas1024-QAM,p

7、oweramplifier(PA),Q-band.furtherincreasedbyspatiallycombiningtheradiatedpowerofstacked-FETCMOSPAs.Hanafietal.reportedoutputpowersof600mWfromaCMOSchip[6].However,thenonlinearityI.INTRODUCTIONoftheamplifierswhenoperatednear