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1、ETRIJournal,volume17,number4,January199613OpticalDeterminationoftheHeavy-holeEffectiveMassof(In,Ga)As/GaAsQuantumWellsKyu-SeokLeeandEl-HangLeeCONTENTSABSTRACTWedeterminethereducedmassofheavy-I.INTRODUCTIONholeexcitonandtheheavy-holein-planeII.THEORYmassforaseriesof(In,Ga)As/GaAs
2、strainedlayerquantumwellsusingthemagnetolu-III.DISCUSSIONminescencemeasurementsoftheexcitonIV.CONCLUSIONgroundstateandthemodi®edperturbationapproach.InthetheoreticalcalculationofACKNOWLEDGMENTSthemagnetoexcitongroundstate,theexci-REFERENCEStonreducedmassisconsideredasanad-justab
3、leparameter,andtwovariationpa-rametersareusedintheunperturbedwavefunctionwhichisexpressedintermsofsub-bandwavefunctionsinthegrowthaxisandtheproductoftwo-dimensionalhydro-genandoscillatorlikewavefunctionsforthein-planecomponent.Wetakeintoac-counttheenergydependenceoftransverseand
4、in-planeelectronmassesinthetwo-bandeffectivemassapproximation.Theelectroneffectivemassdecreasesaseitherquantum-wellwidthorindiumcomposi-tionincreases,andsodoestheheavy-holein-planemassdowntothevalueatthede-couplinglimit(mhh;D0:11m0).14Kyu-SeokLeeandEl-HangLeeETRIJournal,volume1
5、7,number4,January1996I.INTRODUCTIONdiamagneticshiftsofmagnetoexcitongroundstateinthepresenceofmagnetic®eldsap-Inrecentyears,opto-electronicpropertiespliedinthedirectionparalleltothegrowthofstrained(In,Ga)As/GaAsquantumwellsaxis.Thebindingenergyanddiamagnetichavebeenwidelyinvesti
6、gatedbecausetheseshiftsoftheexcitongroundstatearesensitivestructuresplaypivotalrolesinprovidingba-toboththecon®nementeffectandexcitonre-sicunderstandingonlow-dimensionalsystemsducedmass.Intheenvelope-functionapproxi-andnewconceptsinvariousdeviceappli-mation,wecalculatedmagnetoex
7、citongroundcationssuchasquantum-welllasers,detac-stateconsideringtheexcitonreducedmasstors,opticalmodulators,andstrainedquan-asanadjustableparameterandignoringthetumwell®eldeffecttransistors(SQWFET)[1].valence-bandmixingeffectonthismass,andTheimportanceofstained(In,Ga)As/GaAscom
8、paredthecalculateddiamagneticshiftsforquantumwe
