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1、T.H.LeeEE214AReviewofMOSDevicePhysics1.0IntroductionThischapterfocusesattentiononthoseaspectsoftransistorbehaviorthatareofimmediaterelevancetotheRFcircuitdesigner.Separationoffirst-orderfromhigher-orderphenom-enaisemphasized,sotherearemanyinstanceswhencrudeapproximationsarepre
2、sentedintheinterestofdevelopinginsight.Asaconsequence,thisreviewisintendedasasupple-mentto,ratherthanareplacementfor,traditionalrigoroustreatmentsofthesubject.Inparticular,wehavetoacknowledgethattoday’sdeep-submicronMOSFETissocomplexadevicethatsimpleequationscannotpossiblyprov
3、ideanythingotherthanfirst-order(maybeevenzeroth-order)approximationstothetruth.Thephilosophyunderlyingthischapteristoconveyasimplestorytoenablefirst-passdesigns,whicharethenverifiedbysimulatorsusingmuchmoresophisticatedmodels.Qualitativeinsightsdevelopedwiththeaidofthezeroth-o
4、rdermodelsenablethedesignertoreactappropriatelytobadnewsfromthesimulator.Wedesignwithasimplersetofmodelsthanweuseforverification.Withthatdeclarationoutoftheway,wenowturntoalittlehistorybeforelaunchingintoaseriesofderivations.2.0ALittleHistoryAttemptstocreatefield-effecttransis
5、tors(FETs)actuallypredatethedevelopmentofbipolardevicesbyovertwentyyears.Infact,thefirstpatentapplicationforaFET-liketransistorwasfiledin1926byJuliusLilienfeld,butheneverconstructedaworkingdevice.1Beforeco-inventingthebipolartransistor,WilliamShockleyalsotriedtomodu-latethecon
6、ductivityofasemiconductortocreateafield-effecttransistor.LikeLilienfeld,problemswithhismaterialssystem,coppercompounds2,preventedsuccess.Evenaftermovingontogermanium(amuchsimpler–andthereforemuchmoreeasilyunderstood–semiconductorthancopperoxide),Shockleywasstillunabletomakeawo
7、rkingFET.Inthecourseoftryingtounderstandthereasonsforthespectacularlackofsuccess,Shock-ley’sBellLaboratoriescolleaguesJohnBardeenandWalterBrattainstumbledacrossthepoint-contactbipolartransistor,thefirstpracticalsemiconductoramplifier.Unresolvedmysterieswiththatdevice(suchasneg
8、ativeβ,amongothers)ledShockleytoinventthejunctiontransistor,a
